IGBT - Field Stop, Trench 1200 V, 25 A FGH25T120SMD Description Using innovative field stop trench IGBT technology, ONSemiconductors new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. C Features FS Trench Technology, Positive Temperature Coefficient High Speed Switching G Low Saturation Voltage: V = 1.8 V I = 25 A CE(sat) C 100% of the Parts Tested for I (Note 1) LM E High Input Impedance E This Device is PbFree and is RoHS Compliant C GG Applications Solar Inverter, Welder, UPS & PFC Applications COLLECTOR (FLANGE) TO2473LD CASE 340CH MARKING DIAGRAMS Y&Z&3&K FGH25T120 SMD Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH25T120SMD = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2020 Rev. 4 FGH25T120SMD/DFGH25T120SMD ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol Ratings Unit Collector to Emitter Voltage V 1200 V CES Gate to Emitter Voltage V 25 V GES Transient Gate to Emitter Voltage 30 V Collector Current T = 25C I 50 A C C Collector Current T = 100C 25 A C Clamped Inductive Load Current (Note 1) T = 25C I 100 A C LM Pulsed Collector Current (Note 2) I 100 A CM Diode Continuous Forward Current T = 25C I 50 A C F Diode Continuous Forward Current T = 100C 25 A C Diode Maximum Forward Current I 200 A FM Maximum Power Dissipation T = 25C P 428 W C D Maximum Power Dissipation T = 100C 214 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 600 V, V = 15 V, I = 100 A, R = 23 , Inductive Load CC GE C G 2. Limited by Tjmax THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case, Max. (IGBT) R 0.35 C/W JC Thermal Resistance, Junction to Case, Max. (Diode) R 1.4 C/W JC Thermal Resistance, Junction to Ambient, Max. R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH25T120SMD FGH25T120SMDF155 TO2473LD 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 1200 V CES GE C Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 25 mA, V = V 4.9 6.2 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 25 A, V = 15 V, T = 25C 1.8 2.4 V CE(sat) C GE C I = 25 A, V = 15 V, T = 175C 1.9 V C GE C www.onsemi.com 2