IGBT - NPT 1200 V, 40 A FGH40N120AN Description Employing NPT technology, ON Semiconductors AN series of IGBTs provides low conduction and switching losses. www.onsemi.com The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters C and uninterruptible power supplies (UPS). Features High Speed Switching G Low Saturation Voltage: V = 2.6 V I = 40 A CE(sat) C High Input Impedance E This Device is PbFree and is RoHS Compliant E Applications C GG Induction Heating, UPC, AC & DC Motor Controls and General Purpose Inverters COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH40N120 AN Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N120AN = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: February, 2020 Rev. 1 FGH40N120AN/DFGH40N120AN ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Parameter Symbol FGH40N120AN Unit Collector to Emitter Voltage V 1200 V CES Gate to Emitter Voltage V 25 V GES Collector Current T = 25C I 64 A C C Collector Current T = 100C 40 A C Pulsed Collector Current I (Note 1) 160 A CM Maximum Power Dissipation T = 25C P 417 W C D Maximum Power Dissipation T = 100C 167 W C Short Circuit Withstand Time, V = 600 V, V = 15 V, T = 125C SCWT 10 s CE GE C Operating Junction Temperature T 55 to +150 C J Storage Temperature Range T 55 to +150 C STG Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Parameter Symbol Typ Max Unit Thermal Resistance, Junction to Case R (IGBT) 0.3 C/W JC Thermal Resistance, Junction to Ambient R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Quantity FGH40N120AN FGH40N120AN TO247 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 1200 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 1 mA 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 1 mA CES CE CES GE GE Leakage Current I V = V , V = 0 V 250 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 3.5 5.5 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 2.6 3.2 V CE(sat) C GE I = 40 A, V = 15 V, T = 125C 2.9 V C GE C I = 64 A, V = 15 V 3.15 V C GE www.onsemi.com 2