IGBT - Field Stop 600 V, 40 A FGH40N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductors new series of Field Stop IGBTs offer the optimum performance for www.onsemi.com Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features C Maximum Junction Temperature: T = 175C J Positive Temperature Coefficient for Easy Parallel Operating High Current Capability G Low Saturation Voltage: V = 1.9 V(Typ.) I = 40 A CE(sat) C High Input Impedance Tightened Parameter Distribution E AEC Qualified and PPAP Capable IGBT: AECQ101 E C This Device is PbFree and is RoHS Compliant GG Applications Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, SMPS, PFC, UPS ABSOLUTE MAXIMUM RATINGS TO2473LD CASE 340CK Rating Symbol Ratings Unit Collector to Emitter Voltage V 600 V CES Gate to Emitter Voltage V 20 V GES MARKING DIAGRAM Collector Current I A C TC = 25C 80 TC = 100C 40 Y&Z&3&K Pulsed Collector Current I 120 A CM FGH40N60 (Note 1) SMD Diode Forward Current I A F TC = 25C 40 TC = 100C 20 Pulsed Diode Maximum Forward I 120 A FM Current (Note 1) Maximum Power Dissipation P W D Y = ON Semiconductor Logo TC = 25C 349 &Z = Assembly Plant Code TC = 100C 174 &3 = Numeric Date Code Operating Junction Temperature T 55 to +175 C J &K = Lot Code FGH40N60SMD = Specific Device Code Storage Temperature Range T 55 to +175 C stg Maximum Lead Temperature T 300 C L ORDERING INFORMATION for Soldering, 1/8 from Case for 5 Seconds See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: February, 2020 Rev. 4 FGH40N60SMDF085/DFGH40N60SMD F085 THERMAL CHARACTERISTICS Parameter Symbol Ratings Unit Thermal Resistance JunctiontoCase, for IGBT R (Note 2) 0.43 C/W JC Thermal Resistance JunctiontoCase, for Diode R 1.8 C/W JC Parameter Symbol Typ. Thermal Resistance JunctiontoAmbient (PCB Mount) (Note 2) R 45 C/W JA 2. R for TO247: according to Mil standard 8831012 test method. R for TO247 : according to JESD512, test method environmental JC JA condition and JESD51 10, test boards for through hole perimeter leaded package thermal measurements. JESD51 3 : Low Effective Thermal Conductivity Test Board for Leaded Surface Mount Package. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Package Type Quantity FGH40N60SMD FGH40N60SMDF085 TO2473 Tube 30 Units ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 250 A 600 V CES GE C Temperature Coefficient of Breakdown BV / T V = 0 V, I = 250 A 0.6 V/C CES J GE C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE I at 80% * B , 175C 800 CES VCES GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICs GE Threshold Voltage V I = 250 A, V = V 3.5 4.5 6.0 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 40 A, V = 15 V 1.9 2.5 V CE(sat) C GE I = 40 A, V = 15 V, T = 175C 2.1 V C GE C DYNAMIC CHARACTERISTICS V = 30 V, V = 0 V, f = 1 MHz Input Capacitance C 1880 2500 pF ies CE GE Output Capacitance C 180 240 pF oes Reverse Transfer Capacitance C 50 65 pF res SWITCHING CHARACTERISTICS TurnOn Delay Time t V = 400 V, I = 40 A, 18 24 ns d(on) CC C R = 6 V = 15 V, G GE Rise Time t 28 36.4 ns r Inductive Load, T = 25C C TurnOff Delay Time t 110 143 ns d(off) Fall Time t 13.2 18.5 ns f TurnOn Switching Loss E 0.92 1.2 mJ on TurnOff Switching Loss E 0.3 0.39 mJ off Total Switching Loss E 1.22 1.59 mJ ts TurnOn Delay Time t V = 400 V, I = 40 A, 16.7 23.8 ns d(on) CC C R = 6 V = 15 V, G GE Rise Time t 27 35.1 ns r Inductive Load, T = 175C C TurnOff Delay Time t 116 151 ns d(off) Fall Time t 56.5 81 ns f TurnOn Switching Loss E 1.47 1.91 mJ on TurnOff Switching Loss E 0.73 0.95 mJ off Total Switching Loss E 2.20 2.86 mJ ts www.onsemi.com 2