X-On Electronics has gained recognition as a prominent supplier of FGH40N65UFDTU IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. FGH40N65UFDTU IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

FGH40N65UFDTU ON Semiconductor

FGH40N65UFDTU electronic component of ON Semiconductor
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Part No.FGH40N65UFDTU
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors N-ch / 40A 650V
Datasheet: FGH40N65UFDTU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 156
Multiples : 1
156 : USD 2.0347
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 8.3799
10 : USD 5.9346
25 : USD 5.607
100 : USD 4.6766
450 : USD 3.9739
900 : USD 3.5014
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 5.3942
4 : USD 3.5565
11 : USD 3.3546
N/A

Obsolete
0
MOQ : 360
Multiples : 360
360 : USD 3.2533
N/A

Obsolete
   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
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We are delighted to provide the FGH40N65UFDTU from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FGH40N65UFDTU and other electronic components in the IGBT Transistors category and beyond.

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IGBT - Field Stop 650 V, 40 A FGH40N65UFDTU, FGH40N65UFDTU-F085 Description www.onsemi.com Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for Automotive Chargers, V I Inverter, and other applications where low conduction and switching CES C losses are essential. 650 V 40 A Features C High Current Capability Low Saturation Voltage: V = 1.8 V I = 40 A CE(sat) C High Input Impedance Fast Switching G Qualified to Automotive Requirements of AECQ101 (FGH40N65UFDTUF085) E These Devices are PbFree and are RoHS Compliant E C Applications G Automotive Chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K Y&Z&3&K FGH40N65 FGH40N65 UFD UFDTU Industrial Automotive Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40N65UFD / FGH40N65UFDTU = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2020 Rev. 3 FGH40N65UFDF085/DFGH40N65UFDTU, FGH40N65UFDTUF085 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Pulsed Collector Current T = 25C 120 A CM C P Maximum Power Dissipation T = 25C 290 W D C T = 100C 116 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Unit R (IGBT) Thermal Resistance, Junction to Case 0.43 C/W JC R (Diode) Thermal Resistance, Junction to Case 1.45 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Qty per Tube FGH40N65UFDTU FGH40N65UFD TO247 Tube 30 FGH40N65UFDTUF085* FGH40N65UFDTU TO247 Tube 30 *Qualified to Automotive Requirements of AECQ101. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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