FGH50N6S2D July 2002 FGH50N6S2D TM 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau 100kHz Operation at 390V, 40A Voltage SMPS II IGBT combining the fast switching speed 200kHZ Operation at 390V, 25A of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices 600V Switching SOA Capability shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high volt- o Typical Fall Time . 90ns at TJ = 125 C age switched mode power supply applications where low conduction loss, fast switching times and UIS capability are Low Gate Charge . 70nC at V = 15V GE essential. SMPS II LGC devices have been specially de- Low Plateau Voltage .6.5V Typical signed for: UIS Rated . 480mJ Power Factor Correction (PFC) circuits Full bridge topologies Low Conduction Loss Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 JEDEC STYLE TO-247 Package Symbol E C C G G E Device Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units BV Collector to Emitter Breakdown Voltage 600 V CES I Collector Current Continuous, T = 25C 75 A C25 C I Collector Current Continuous, T = 110C 60 A C110 C I Collector Current Pulsed (Note 1) 240 A CM V Gate to Emitter Voltage Continuous 20 V GES V Gate to Emitter Voltage Pulsed 30 V GEM SSOA Switching Safe Operating Area at T = 150C, Figure 2 150A at 600V J E Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V 480 mJ AS CE DD P Power Dissipation Total T = 25C 463 W D C Power Dissipation Derating T > 25C 3.7 W/C C T Operating Junction Temperature Range -55 to 150 C J T Storage Junction Temperature Range -55 to 150 C STG CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. 2002 Fairchild Semiconductor Corporation FGH50N6S2D RevA2FGH50N6S2D Package Marking and Ordering Information Device Marking Device Package Tape Width Quantity 50N6S2D FGH50N6S2D TO-247 N/A 30 Electrical Characteristics T = 25C unless otherwise noted J Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BV Collector to Emitter Breakdown Voltage I = 250 A, V = 0 600 - - V CES C GE I Collector to Emitter Leakage Current V = 600V T = 25C- - 250 A CES CE J T = 125C- - 2.8 mA J I Gate to Emitter Leakage Current V = 20V - - 250 nA GES GE On State Characteristics V Collector to Emitter Saturation Voltage I = 30A, T = 25C- 1.9 2.7 V CE(SAT) C J V = 15V GE T = 125C- 1.7 2.2 V J V Diode Forward Voltage I = 30A - 2.2 2.6 V EC EC Dynamic Characteristics Q Gate Charge I = 30A, V = 15V - 70 85 nC G(ON) C GE V = 300V CE V = 20V - 90 110 nC GE V Gate to Emitter Threshold Voltage I = 250 A, V = V 3.5 4.3 5.0 V GE(TH) C CE GE V Gate to Emitter Plateau Voltage I = 30A, V = 300V - 6.5 8.0 V GEP C CE Switching Characteristics SSOA Switching SOA T = 150C, V = 15V, R = 3 150 - - A J GE G L = 100 H, V = 600V CE t Current Turn-On Delay Time IGBT and Diode at T = 25C, -13- ns d(ON)I J I = 30A, t Current Rise Time CE - 15 - ns rI V = 390V, CE t Current Turn-Off Delay Time - 55 - ns d(OFF)I V = 15V, GE t Current Fall Time - 50 - ns fI R = 3 G E Turn-On Energy (Note 2) - 260 - J ON1 L = 200 H E Turn-On Energy (Note 2) Test Circuit - Figure 26 - 330 - J ON2 E Turn-Off Energy (Note 3) - 250 350 J OFF t Current Turn-On Delay Time IGBT and Diode at T = 125C -13- ns d(ON)I J I = 30A, t Current Rise Time CE - 15 - ns rI V = 390V, CE t Current Turn-Off Delay Time - 92 150 ns d(OFF)I V = 15V, GE t Current Fall Time - 88 100 ns fI R = 3 G E Turn-On Energy (Note 2) - 260 - J ON1 L = 200 H E Turn-On Energy (Note 2) Test Circuit - Figure 26 - 490 600 J ON2 E Turn-Off Energy (Note 3) - 575 850 J OFF t Diode Reverse Recovery Time I = 30A, dI /dt = 200A/ s - 50 55 ns rr EC EC I = 1A, dI /dt = 200A/ s - 30 42 ns EC EC Thermal Characteristics R Thermal Resistance Junction-Case IGBT - - 0.27 C/W JC Diode - - 1.1 C/W NOTE: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E is the turn-on loss ON1 of the IGBT only. E is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T ON2 J as the IGBT. The diode type is specified in figure 26. 3. Turn-Off Energy Loss (E ) is defined as the integral of the instantaneous power loss starting at the trailing edge of OFF the input pulse and ending at the point where the collector current equals zero (I = 0A). All devices were tested per CE JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produc- es the true total Turn-Off Energy Loss. 2002 Fairchild Semiconductor Corporation FGH50N6S2D RevA2