IGBT - FS, Trench 1200 V, 40 A FGH40T120SMDL4 Description Using innovative field stop trench IGBT technology, ONSemiconductors new series of field stop trench IGBTs offer www.onsemi.com the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications. V I CES C Features 1200 V 40 A FS Trench Technology, Positive Temperature Coefficient C Excellent Switching Performance due to Kelvin Emitter Pin Low Saturation Voltage: V = 1.8 V I = 40 A CE(sat) C 100% of the Parts Tested for I LM E1: Kelvin Emitter E2: Power Emitter High Input Impedance G This Device is PbFree and is RoHS Compliant E1 E2 Applications Solar Inverter, Welder, UPS and PFC Applications C E2 E1 G TO2474LD CASE 340CJ MARKING DIAGRAM Y&Z&3&K FGH40T120 SMDL4 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH40T120SMDL4= Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2019 Rev. 2 FGH40T120SMDL4/DFGH40T120SMDL4 ABSOLUTE MAXIMUM RATINGS Symbol Description FGH40T120SMDL4 Unit V Collector to Emitter Voltage 1200 V CES V Gate to Emitter Voltage 25 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Clamped Inductive Load Current T = 25C 160 A LM C I (Note 2) Pulsed Collector Current 160 A CM I Diode Continuous Forward Current T = 25C 80 A F C Diode Continuous Forward Current T = 100C 40 A C I Diode Maximum Forward Current 240 A FM P Maximum Power Dissipation T = 25C 555 W D C T = 100C 277 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 600 V, V = 15 V, I = 160 A, R = 20 , Inductive Load. CC GE C G 2. Limited by Tjmax. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SQDTF155 Unit R (IGBT) Thermal Resistance, Junction to Case 0.27 C/W JC R (Diode) Thermal Resistance, Junction to Case 0.89 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Reel Size Tape Width Quantity FGH40T120SMDL4 FGH40T120SMDL4 TO2474LD 30 www.onsemi.com 2