IGBT - Ultra Field Stop FGH40T120SQDNL4 This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low onstate voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device www.onsemi.com is a soft and fast copackaged free wheeling diode with a low forward voltage. Features 40 A, 1200 V Extremely Efficient Trench with Field Stop Technology V = 1.7 V CEsat T = 175C Jmax E = 1.1 mJ off Soft Fast Reverse Recovery Diode Optimized for High Speed Switching C These are PbFree Devices Typical Applications Solar Inverter G Uninterruptible Power Inverter Supplies (UPS) Welding E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1200 V CES Collector current I A C TC = 25C 160 C TO2474L TC = 100C 40 E E CASE 340CJ G Pulsed collector current, T I 160 A pulse CM limited by T Jmax MARKING DIAGRAM Diode forward current I A F TC = 25C 160 TC = 100C 40 Diode pulsed current, T limited I 160 A pulse FM by T Jmax FGH40T120 Gateemitter voltage V 20 V SQDNL4 GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse Power Dissipation P W D TC = 25C 454 TC = 100C 227 Operating junction temperature range T 55 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Device Package Shipping FGH40T120SQDNL4 TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2019 Rev. 2 FGH40T120SQDNL4/DFGH40T120SQDNL4 THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.33 C/W JC Thermal resistance junctiontocase, for Diode R 0.61 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited 1250* Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.78 1.95 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.3 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 0.6 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited * Guaranteed by design. Input capacitance C 5000 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 140 CE GE oes Reverse transfer capacitance C 80 res Gate charge total Q 221 nC g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 52 CE C GE ge Gate to collector charge Q 100 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 46 ns d(on) Rise time t 33 r Turnoff delay time T = 25C t 220 J d(off) V = 600 V, I = 40 A CC C Fall time t 56 f R = 10 g Turnon switching loss V = 0 to 15V E 1.4 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 2.5 ts Turnon delay time t 47 ns d(on) Rise time t 33 r Turnoff delay time T = 175C t 240 d(off) J V = 600 V, I = 40 A CC C Fall time t 132 f R = 10 g Turnon switching loss V = 0 to 15 V E 2.7 mJ GE on Turnoff switching loss E 1.8 off Total switching loss E 4.5 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 3.4 3.8 V GE F F V = 0 V, I = 40 A, T = 175C 3.1 GE F J Reverse recovery time t 166 ns rr T = 25C J Reverse recovery charge I = 40 A, V = 400 V Q 0.78 c F R rr di /dt = 500 A/ s F Reverse recovery current I 9.0 A rrm Reverse recovery time t 390 ns rr T = 125C J Reverse recovery charge I = 40 A, V = 400 V Q 4.0 c F R rr di /dt = 500 A/ s F Reverse recovery current I 20 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2