NGTB40N120FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant www.onsemi.com reduction in E Losses compared to standard TO2473L package. on The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with 40 A, 1200 V a low forward voltage. V = 2.1 V CEsat Features E = 1.7 mJ on Extremely Efficient Trench with Field Stop Technology C T = 175C Jmax Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on G Optimized for High Speed Switching These are PbFree Devices E1 E Typical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Neutral Point Clamp Topology TO247 C ABSOLUTE MAXIMUM RATINGS E CASE 340AR E1 Rating Symbol Value Unit G 4 LEAD Collectoremitter voltage V 1200 V CES Collector current I A MARKING DIAGRAM C TC = 25C 160 TC = 100C 40 Pulsed collector current, T I 160 A pulse CM limited by T Jmax Diode forward current I A F 40N120FL2 TC = 25C 160 AYWWG TC = 100C 40 Diode pulsed current, T limited I 160 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 (T = 5 s, D < 0.10) pulse 40N120FL2 = Specific Device Code A = Assembly Location Power Dissipation P W D Y = Year TC = 25C 536 TC = 100C 268 WW = Work Week G = PbFree Package Operating junction temperature range T 55 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD ORDERING INFORMATION from case for 5 seconds Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NGTB40N120FL2WAG TO247 30 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 0 NGTB40N120FL2WA/DNGTB40N120FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.50 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 2.1 2.4 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.4 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 7500 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 136 oes CE GE Reverse transfer capacitance C 230 res nC Gate charge total Q 313 g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 61 CE C GE ge Gate to collector charge Q 151 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 30 ns d(on) Rise time t 33 r Turnoff delay time t 145 T = 25C J d(off) V = 600 V, I = 40 A CC C Fall time t 95 f R = 10 g Turnon switching loss V = 15V E 1.7 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 2.8 ts Turnon delay time t 28 ns d(on) Rise time t 37 r Turnoff delay time t 165 T = 175C J d(off) V = 600 V, I = 40 A CC C Fall time t 195 f R = 10 g Turnon switching loss E 2.5 mJ V = 15 V GE on Turnoff switching loss E 2.5 off Total switching loss E 5.0 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 2.00 2.40 V GE F F V = 0 V, I = 40 A, T = 175C 2.30 GE F J Reverse recovery time t 240 ns rr T = 25C J Reverse recovery charge Q 2.5 c I = 40 A, V = 400 V F R rr di /dt = 200 A/ s F Reverse recovery current I 18 A rrm Reverse recovery time t 392 ns rr T = 175C J Reverse recovery charge Q 5.4 c I = 40 A, V = 400 V rr F R di /dt = 200 A/ s F Reverse recovery current I 26 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2