NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low NGTB40N120FLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.48 C/W JC Thermal resistance junctiontocase, for Diode R 1.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.50 2.0 2.2 V GE C CEsat V = 15 V, I = 40 A, T = 150C 2.2 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 400 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 1.0 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES short circuited DYNAMIC CHARACTERISTIC Input capacitance C 10,000 pF ies Output capacitance C 240 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 180 res Gate charge total Q 415 nC g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 80 ge CE C GE Gate to collector charge Q 170 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 130 ns d(on) Rise time t 41 r Turn off delay time t 385 d(off) T = 25C J V = 600 V, I = 40 A CC C Fall time t 140 f R = 10 g V = 0 V/ 15V Turnon switching loss E 2.6 mJ GE on Turn off switching loss E 1.6 off Total switching loss E 4.2 ts Turnon delay time t 130 ns d(on) Rise time t 42 r Turn off delay time t 400 d(off) T = 125C J V = 600 V, I = 40 A CC C Fall time t 230 f R = 10 g V = 0 V/ 15V Turnon switching loss GE E 3.0 mJ on Turn off switching loss E 2.8 off Total switching loss E 5.8 ts