NGTB40N120S3WG IGBT - Ultra Field Stop This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering low switching losses. The IGBT is well suited for applications that require fast switching IGBT with low V diodes, e.g. phaseshifted full F www.onsemi.com bridge, etc. Incorporated into the device is a free wheeling diode with a low forward voltage. 40 A, 1200 V Features V = 1.7 V Extremely Efficient Trench with Field Stop Technology CEsat E = 1.1 mJ T = 175C Jmax off Low V Reverse Diode F C Optimized for High Speed Switching These are PbFree Devices Typical Applications Welding G Uninterruptible Power Inverter Supplies (UPS) Motor Control E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 1200 V CES Collector current I A C TC = 25C 160 G TC = 100C 40 TO247 C CASE 340AL E Pulsed collector current, T I 160 A pulse CM limited by T Jmax Diode forward current I A F TC = 25C 160 MARKING DIAGRAM TC = 100C 40 Diode pulsed current, T limited I 160 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Transient gateemitter voltage 30 40N120S3 (T = 5 s, D < 0.10) pulse AYWWG Power Dissipation P W D TC = 25C 454 TC = 100C 227 Operating junction temperature range T 55 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD A = Assembly Location from case for 10 seconds Y = Year WW = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NGTB40N120S3WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2018 Rev. 0 NGTB40N120S3W/DNGTB40N120S3WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.34 C/W JC Thermal resistance junctiontocase, for Diode R 0.5 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 1200 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.7 1.95 V GE C CEsat V = 15 V, I = 40 A, T = 175C 2.3 GE C J Gateemitter threshold voltage V = V , I = 400 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 1200 V I 0.4 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 0.5 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited Input capacitance C 4912 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 140 CE GE oes Reverse transfer capacitance C 80 res Gate charge total Q 212 nC g Gate to emitter charge V = 600 V, I = 40 A, V = 15 V Q 43 CE C GE ge Gate to collector charge Q 102 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 12 ns d(on) Rise time t 25 r Turnoff delay time T = 25C t 145 J d(off) V = 600 V, I = 40 A CC C Fall time t 107 f R = 10 g Turnon switching loss V = 15V E 2.2 mJ GE on Turnoff switching loss E 1.1 off Total switching loss E 3.3 ts Turnon delay time t 13 ns d(on) Rise time t 24 r Turnoff delay time T = 175C t 153 d(off) J V = 600 V, I = 40 A CC C Fall time t 173 f R = 10 g Turnon switching loss V = 15 V E 2.8 mJ GE on Turnoff switching loss E 1.6 off Total switching loss E 4.4 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 2.0 2.6 V GE F F V = 0 V, I = 40 A, T = 175C 2.55 GE F J Reverse recovery time t 163 ns rr Reverse recovery charge Q 2.9 c rr T = 25C J I = 40 A, V = 400 V Reverse recovery current F R I 30 A rrm di /dt = 500 A/ s F Diode peak rate of fall of reverse recovery dI /dt 137 A/ s rrm current during tb www.onsemi.com 2