NGTB50N60S1WG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast www.onsemi.com copackaged free wheeling diode with a low forward voltage. Features 50 A, 600 V T = 175C Jmax V = 1.80 V CEsat Soft Fast Reverse Recovery Diode E = 0.46 mJ OFF Optimized for High Speed Switching 5 s ShortCircuit Capability C This is a PbFree Device Typical Applications Welding G ABSOLUTE MAXIMUM RATINGS E Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 100 TC = 100C 50 Diode Forward Current I A F TC = 25C 100 G TO247 C TC = 100C 50 CASE 340AL E Diode Pulsed Current I 200 A FM T Limited by T Max PULSE J Pulsed collector current, T I 200 A pulse CM limited by T Jmax MARKING DIAGRAM Shortcircuit withstand time t 5 s SC V = 15 V, V = 400 V, GE CE T +150C J Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 50N60S1 (T = 5 s, D < 0.10) PULSE AYWWG Power Dissipation P W D TC = 25C 417 TC = 100C 208 Operating junction temperature T 55 to +175 C J range Storage temperature range T 55 to +175 C stg A = Assembly Location Y = Year Lead temperature for soldering, 1/8 T 260 C SLD WW = Work Week from case for 5 seconds G = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NGTB50N60S1WG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: December, 2014 Rev. 1 NGTB50N60S1W/DNGTB50N60S1WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.36 C/W JC Thermal resistance junctiontocase, for Diode R 0.60 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.50 1.80 2.00 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.19 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5328 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 252 CE GE oes Reverse transfer capacitance C 148 res Gate charge total Q 220 nC g Gate to emitter charge V = 480 V, I = 50 A, V = 15 V Q 52 CE C GE ge Gate to collector charge Q 116 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 100 ns d(on) Rise time t 47 r Turnoff delay time T = 25C t 237 J d(off) V = 400 V, I = 50 A CC C Fall time t 67 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.50 mJ GE on Turnoff switching loss E 0.46 off Total switching loss E 1.96 ts Turnon delay time t 90 ns d(on) Rise time t 49 r Turnoff delay time T = 150C t 245 J d(off) V = 400 V, I = 50 A CC C Fall time t 96 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.90 mJ GE on Turnoff switching loss E 0.83 off Total switching loss E 2.73 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 2.10 2.90 V GE F F V = 0 V, I = 50 A, T = 175C 2.20 GE F J Reverse recovery time t 94 ns rr T = 25C J Reverse recovery charge Q 0.45 C I = 50 A, V = 400 V F R rr di /dt = 200 A/ s F Reverse recovery current I 8 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2