NGTB75N65FL2WAG IGBT - Field Stop II / 4 Lead This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO2474L package that provides significant reduction in E Losses compared to standard TO2473L package. www.onsemi.com on The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with 75 A, 650 V a low forward voltage. V = 1.70 V CEsat Features E = 0.61 mJ Extremely Efficient Trench with Field Stop Technology on T = 175C Jmax C Improved Gate Control Lowers Switching Losses Separate Emitter Drive Pin TO2474L for Minimal E Losses on Optimized for High Speed Switching G These are PbFree Devices E1 Typical Applications E Solar Inverter Uninterruptible Power Inverter Supplies (UPS) Neutral Point Clamp Topology ABSOLUTE MAXIMUM RATINGS TO247 Rating Symbol Value Unit C E CASE 340AR Collectoremitter voltage V 650 V E1 CES 4 LEAD G Collector current I A C TC = 25C 200 MARKING DIAGRAM TC = 100C 75 Diode Forward Current I A F TC = 25C 200 TC = 100C 75 Diode Pulsed Current I 200 A FM 75N65FL2 T Limited by T Max PULSE J AYWWG Pulsed collector current, T I 200 A pulse CM limited by T Jmax Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE 75N65FL2 = Specific Device Code Power Dissipation P W D A = Assembly Location TC = 25C 536 Y = Year TC = 100C 268 WW = Work Week Operating junction temperature range T 55 to +175 C J G = PbFree Package Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD ORDERING INFORMATION from case for 5 seconds Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NGTB75N65FL2WAG TO247 30 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 0 NGTB75N65FL2WA/DNGTB75N65FL2WAG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.28 C/W JC Thermal resistance junctiontocase, for Diode R 0.62 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V (BR)CES GE C gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 75 A V 1.50 1.70 2.00 V GE C CEsat V = 15 V, I = 75 A, T = 175C 2.30 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.3 mA GE CE CES emitter shortcircuited V = 0 V, V = 650 V, T 175C 7.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 7200 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 300 oes CE GE Reverse transfer capacitance C 200 res Gate charge total Q 310 nC g Gate to emitter charge V = 480 V, I = 75 A, V = 15 V Q 60 CE C GE ge Gate to collector charge Q 160 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 23 ns d(on) Rise time t 50 r Turnoff delay time T = 25C t 157 J d(off) V = 400 V, I = 75 A CC C Fall time t 55 f R = 10 g Turnon switching loss V = 15 V E 0.61 mJ GE on Turnoff switching loss E 1.2 off Total switching loss E 1.81 ts Turnon delay time t 28 ns d(on) Rise time t 50 r Turnoff delay time T = 175C t 172 J d(off) V = 400 V, I = 75 A CC C Fall time t 90 f R = 10 g Turnon switching loss V = 15 V E 0.85 mJ GE on Turnoff switching loss E 1.8 off Total switching loss E 2.65 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 75 A V 1.50 2.30 2.90 V GE F F V = 0 V, I = 75 A, T = 175C 2.50 GE F J Reverse recovery time t 90 ns rr T = 25C J Reverse recovery charge Q 0.40 C I = 75 A, V = 200 V F R rr di /dt = 200 A/ s F Reverse recovery current I 7.0 A rrm Reverse recovery time t 173 ns rr T = 175C J Reverse recovery charge I = 75 A, V = 200 V Q 1.47 C rr F R di /dt = 200 A/ s F Reverse recovery current I 13 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2