Preliminary Technical Information TM 900V XPT IGBT V = 900V IXYH24N90C3D1 CES TM GenX3 w/Diode I = 24A C90 V 3.0V CE(sat) t = 90ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 900 V CES J V T = 25C to 150C, R = 1M 900 V CGR J GE V Continuous 20 V GES G V Transient 30 V C GEM E Tab I T = 25C 44 A C25 C I T = 90 24 A C90 C G = Gate C = Collector I T = 110C 15 A F110 C E = Emitter Tab = Collector I T = 25C, 1ms 105 A CM C I T = 25C 15 A A C E T = 25C 150 mJ AS C Features SSOA V = 15V, T = 125C, R = 10 I = 48 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Optimized for Low Switching Losses P T = 25C 200 W C C Square RBSOA Positive Thermal Coefficient of T -55 ... +150 C J Vce(sat) T 150 C JM Anti-Parallel Ultra Fast Diode T -55 ... +150 C stg Avalanche Rated High Current Handling Capability T Maximum Lead Temperature for Soldering 300 C L International Standard Package T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 6 g High Power Density Low Gate Drive Requirement Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Frequency Power Inverters BV I = 250 A, V = 0V 950 V CES C GE UPS V I = 250 A, V = V 3.5 6.0 V Motor Drives GE(th) C CE GE SMPS I V = V , V = 0V 75 A CES CE CES GE PFC Circuits T = 125C 400 A J Battery Chargers Welding Machines I V = 0V, V = 20V 100 nA GES CE GE Lamp Ballasts V I = 24A, V = 15V, Note 1 2.30 3.00 V CE(sat) C GE T = 125C 2.95 V J 2017 IXYS CORPORATION, All Rights Reserved DS100396B(02/17)IXYH24N90C3D1 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 24A, V = 10V, Note 1 8 14 S fs C CE Q S D2 R C 1190 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 64 pF 0P1 oes CE GE 4 R1R1R1R1 C 22 pF 1 2 3 res IXYS OPTION L1 C Q 40 nC g(on) E1 L Q I = 24A, V = 15V, V = 0.5 V 10 nC ge C GE CE CES Q 18 nC gc A1 b c b2 t 20 ns b4 d(on) 1 - Gate e 2,4 - Collector t 36 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 1.35 mJ I = 24A, V = 15V on C GE t 73 ns V = 0.5 V , R = 10 d(off) CE CES G t 90 ns fi Note 2 E 0.40 0.70 mJ f of t 22 ns d(on) Inductive load, T = 125C t 38 ns J ri I = 24A, V = 15V E 2.60 mJ C GE on V = 0.5 V , R = 10 t 85 ns CE CES G d(off) t 130 ns Note 2 fi E 0.55 mJ off R 0.62 C/W thJC R 0.21 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 3.25 V F I = 15A,V = 0V, Note 1 F GE T = 150C 2.0 V J I 14 A RM I = 15A,V = 0V, -di /dt = 250A/ s, T = 100C F GE F J V = 600V T = 100C t 340 ns R J rr R 1.6 C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537