NGTG20N60L2TF1G ON Semiconductor

Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT NGTG20N60L2TF1G Electrical Characteristics at Ta = 25C, Unless otherwise specified Ratings Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =500A, V=0V 600 V BR CES C GE Tc=25C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1 mA Gate to Emitter Leakage Current I V =20V, V =0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =250A 4.5 6.5V GE CE C Tc=25C 1.45 1.65 V Collector to Emitter Saturation Voltage V () V =15V, I =20A CE sat GE C Tc=150C 1.8 V Input Capacitance Cies 2000 pF Output Capacitance Coes V =20V,f=1MHz 60 pF CE Reverse Transfer Capacitance Cres 50 pF Turn-ON Delay Time t (on) 60 ns d V =300V,I =20A Rise Time t CC C 37 ns r R =30,L=200H G Turn-ON Time ton 400 ns V =0V/15V GE Turn-OFF Delay Time t(off) 193 ns d Vclamp=400V Fall Time t 67 ns f See Fig.1, See Fig.2 Turn-OFF Time toff 281 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge V =300V, V =15V, I =20A 16 nC CE GE C Gate to Collector Miller Charge Qgc 37 nC Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Thermal Resistance (junction- Case) Rth(j-c) Tc=25C (our ideal heat dissipation condition)*2 2.33 C /W Thermal Resistance (junction- atmosphere) Rth(j-a) 47.5 C /W Fig.1 Switching Time Test Circuit Fig.2 Timing Chart Clamp Di V GE 90% 10% 0 200H DUT I C V 90% 90% R CC G 10% 10% 10% 10% V CE 0 NGTG20N60L2TF1G t t f r t (off) t (on) d d t t on off IT16383 No.A2202-2/7