X-On Electronics has gained recognition as a prominent supplier of NGTG20N60L2TF1G IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGTG20N60L2TF1G IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGTG20N60L2TF1G ON Semiconductor

NGTG20N60L2TF1G electronic component of ON Semiconductor
NGTG20N60L2TF1G ON Semiconductor
NGTG20N60L2TF1G IGBT Transistors
NGTG20N60L2TF1G  Semiconductors

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See Product Specifications
Part No. NGTG20N60L2TF1G
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors 600V 20A IGBT TO-3PF
Datasheet: NGTG20N60L2TF1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
230: USD 2.1288 ea
Line Total: USD 489.62 
Availability - 13821
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ: 230  Multiples: 1
Pack Size: 1
Availability Price Quantity
3404
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 230
Multiples : 1
230 : USD 2.1288
500 : USD 2.0312
1000 : USD 1.9175

13821
Ship by Mon. 27 Jan to Fri. 31 Jan
MOQ : 230
Multiples : 1
230 : USD 2.1288
500 : USD 2.0312
1000 : USD 1.9175

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Collector Emitter Voltage Vceo Max
Package Case
Brand
Collector Emitter Saturation Voltage
Gate Emitter Leakage Current
Factory Pack Quantity :
Rohs Mouser
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NGTG20N60L2TF1G from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGTG20N60L2TF1G and other electronic components in the IGBT Transistors category and beyond.

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Ordering number : ENA2202 NGTG20N60L2TF1G N-Channel IGBT NGTG20N60L2TF1G Electrical Characteristics at Ta = 25C, Unless otherwise specified Ratings Parameter Symbol Conditions Unit min typ max Collector to Emitter Breakdown Voltage V( ) I =500A, V=0V 600 V BR CES C GE Tc=25C 10 A Collector to Emitter Cut off Current I V =600V, V =0V CES CE GE Tc=150C 1 mA Gate to Emitter Leakage Current I V =20V, V =0V 100 nA GES GE CE Gate to Emitter Threshold Voltage V(th) V =20V, I =250A 4.5 6.5V GE CE C Tc=25C 1.45 1.65 V Collector to Emitter Saturation Voltage V () V =15V, I =20A CE sat GE C Tc=150C 1.8 V Input Capacitance Cies 2000 pF Output Capacitance Coes V =20V,f=1MHz 60 pF CE Reverse Transfer Capacitance Cres 50 pF Turn-ON Delay Time t (on) 60 ns d V =300V,I =20A Rise Time t CC C 37 ns r R =30,L=200H G Turn-ON Time ton 400 ns V =0V/15V GE Turn-OFF Delay Time t(off) 193 ns d Vclamp=400V Fall Time t 67 ns f See Fig.1, See Fig.2 Turn-OFF Time toff 281 ns Total Gate Charge Qg 84 nC Gate to Emitter Charge Qge V =300V, V =15V, I =20A 16 nC CE GE C Gate to Collector Miller Charge Qgc 37 nC Thermal Characteristics at Ta = 25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Thermal Resistance (junction- Case) Rth(j-c) Tc=25C (our ideal heat dissipation condition)*2 2.33 C /W Thermal Resistance (junction- atmosphere) Rth(j-a) 47.5 C /W Fig.1 Switching Time Test Circuit Fig.2 Timing Chart Clamp Di V GE 90% 10% 0 200H DUT I C V 90% 90% R CC G 10% 10% 10% 10% V CE 0 NGTG20N60L2TF1G t t f r t (off) t (on) d d t t on off IT16383 No.A2202-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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