X-On Electronics has gained recognition as a prominent supplier of IGB30N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGB30N60T IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGB30N60T Infineon

IGB30N60T electronic component of Infineon
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Part No.IGB30N60T
Manufacturer: Infineon
Category: IGBT Transistors
Description: Infineon Technologies IGBT Transistors LOW LOSS IGBT TECH 600V 30A
Datasheet: IGB30N60T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4497 ea
Line Total: USD 2.45 
Availability - 948
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
948
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4497
10 : USD 1.8958
100 : USD 1.4272
500 : USD 1.2781
1000 : USD 1.2142

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGB30N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGB30N60T and other electronic components in the IGBT Transistors category and beyond.

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IGB30N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI PG-TO263-3 Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGB30N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.80 IGBT thermal resistance, R K/W t h J C junction case Thermal resistance, R 6 cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =30A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 2000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =30A - 16.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s CE Output capacitance C V =0V, - 108 - GE o s s f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I - 275 - A V =15V,t 5 s C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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