X-On Electronics has gained recognition as a prominent supplier of IGB50N60T IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGB50N60T IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGB50N60T Infineon

IGB50N60T electronic component of Infineon
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See Product Specifications
Part No.IGB50N60T
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Datasheet: IGB50N60T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.037 ea
Line Total: USD 4.04 
Availability - 525
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
525
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 4.037
10 : USD 3.421
25 : USD 3.289
100 : USD 2.893
250 : USD 2.739
500 : USD 2.607
1000 : USD 2.299
2000 : USD 2.299
5000 : USD 2.2

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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We are delighted to provide the IGB50N60T from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGB50N60T and other electronic components in the IGBT Transistors category and beyond.

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IGB50N60T TRENCHSTOP Series p Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: CC Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s GG Designed for frequency inverters for washing machines, fans, EE pumps and vacuum cleaners TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge PG-TO263-3 Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGB50N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Thermal resistance, R 6cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =50A C E ( s a t ) GE C T =25 C - 1.5 2.0 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.8mA,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =50A - 31 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 3140 - pF i s s CE V =0V, Output capacitance C - 200 - o s s GE f=1MHz Reverse transfer capacitance C - 93 - r s s Gate charge Q V =480V, I =50A - 310 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 458.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.7 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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