IGB10N60T TRENCHSTOP Series p Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge 1 PG-TO263-3 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGB10N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.35 K/W t h J C junction case Thermal resistance, R Footprint 65 t h J A junction ambient 6cm Cu 40 Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =10A C E ( s a t ) GE C - 1.5 2.05 T =25 C j - 1.8 - T =175 C j Gate-emitter threshold voltage V I =0.3mA,V =V 4.1 4.6 5.7 G E ( t h) C CE GE I V =600V, Zero gate voltage collector current A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =10A - 6 - S fs CE C Integrated gate resistor R none G i n t Dynamic Characteristic C V =25V, Input capacitance - 551 - pF i s s CE Output capacitance C V =0V, - 40 - GE o s s f=1MHz Reverse transfer capacitance C - 17 - r s s Q V =480V, I =10A Gate charge - 62 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) I Short circuit collector current V =15V,t 5 s - 100 - A C ( S C ) GE SC V = 400V, C C T = 25 C j Switching Characteristic, Inductive Load, at T =25 C j Value Parameter Symbol Conditions Unit min. typ. max. IGBT Characteristic Turn-on delay time t T =25 C, - 12 - ns j d ( o n ) 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.1 30.04.2015 IFAG IPC TD VLS