IGD06N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology Features: Very low V 1.5 V (typ.) C CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution G E - high ruggedness, temperature stable behavior Low EMI 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGD06N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.7 K/W t h J C junction case R Thermal resistance, 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, 600 - - V ( B R ) C E S GE I =0.25mA C Collector-emitter saturation voltage V V = 15V, I =6A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.8 T =175 C j Gate-emitter threshold voltage V I =0.18mA, 4.1 4.6 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE - - 40 T =25 C j - - 700 T =175 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =6A - 3.6 - S fs CE C Integrated gate resistor R none G i n t Dynamic Characteristic Input capacitance C V =25V, - 368 - pF i s s CE V =0V, Output capacitance C - 28 - o s s GE f=1MHz Reverse transfer capacitance C - 11 - r s s Gate charge Q V =480V, I =6A - 42 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 55 - A C ( S C ) GE SC V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.2, 20.09.2013 IFAG IPC TD VLS