X-On Electronics has gained recognition as a prominent supplier of IGB30N60H3 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGB30N60H3 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGB30N60H3 Infineon

IGB30N60H3 electronic component of Infineon
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See Product Specifications
Part No.IGB30N60H3
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Datasheet: IGB30N60H3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.652 ea
Line Total: USD 2.65 
Availability - 407
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
407
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 2.652
10 : USD 2.013
100 : USD 1.5976
250 : USD 1.4272
500 : USD 1.374
1000 : USD 1.31
2000 : USD 1.2994
5000 : USD 1.2675
10000 : USD 1.2462

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
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We are delighted to provide the IGB30N60H3 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGB30N60H3 and other electronic components in the IGBT Transistors category and beyond.

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IGB30N60T TRENCHSTOP Series q Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum G cleaners E TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI PG-TO263-3 Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGB30N60T TRENCHSTOP Series q Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic 0.80 IGBT thermal resistance, R K/W t h J C junction case Thermal resistance, R 6 cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =30A C E ( s a t ) GE C T =25 C - 1.5 2.05 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.43mA, 4.1 4.9 5.7 G E ( t h) C V =V CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 2000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =30A - 16.7 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 1630 - pF i s s CE Output capacitance C V =0V, - 108 - GE o s s f=1MHz Reverse transfer capacitance C - 50 - r s s Gate charge Q V =480V, I =30A - 167 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I - 275 - A V =15V,t 5 s C ( S C ) GE SC V = 400V, C C T = 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.5 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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