X-On Electronics has gained recognition as a prominent supplier of IGB50N60TATMA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGB50N60TATMA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGB50N60TATMA1 Infineon

IGB50N60TATMA1 electronic component of Infineon
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Part No.IGB50N60TATMA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Trans IGBT Chip N-CH 600V 90A 3-Pin(2+Tab) D2PAK
Datasheet: IGB50N60TATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.5053 ea
Line Total: USD 4.51 
Availability - 509
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
509
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 1
Multiples : 1
1 : USD 4.5053
10 : USD 3.2378
25 : USD 3.2272
100 : USD 2.4284
500 : USD 2.226
1000 : USD 2.1302

970
Ship by Thu. 26 Dec to Wed. 01 Jan
MOQ : 7
Multiples : 1
7 : USD 6.4025
10 : USD 4.6963
50 : USD 4.55
500 : USD 4.5175
1000 : USD 4.0463

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IGB50N60TATMA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGB50N60TATMA1 and other electronic components in the IGBT Transistors category and beyond.

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IGB50N60T TRENCHSTOP Series p Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology Features: CC Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5 s GG Designed for frequency inverters for washing machines, fans, EE pumps and vacuum cleaners TRENCHSTOP technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in V CE(sat) Low EMI Low Gate Charge PG-TO263-3 Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : IGB50N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.45 K/W t h J C junction case Thermal resistance, R 6cm Cu 40 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =50A C E ( s a t ) GE C T =25 C - 1.5 2.0 j - 1.9 - T =175 C j Gate-emitter threshold voltage V I =0.8mA,V =V 4.1 4.9 5.7 G E ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 3500 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =50A - 31 - S fs CE C Integrated gate resistor R - G i n t Dynamic Characteristic Input capacitance C V =25V, - 3140 - pF i s s CE V =0V, Output capacitance C - 200 - o s s GE f=1MHz Reverse transfer capacitance C - 93 - r s s Gate charge Q V =480V, I =50A - 310 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 458.3 - A C ( S C ) GE SC V = 400V, C C T 150 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.7 19.05.2015 IFAG IPC TD VLS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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