X-On Electronics has gained recognition as a prominent supplier of IGP03N120H2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IGP03N120H2 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IGP03N120H2 Infineon

IGP03N120H2 electronic component of Infineon
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Part No.IGP03N120H2
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A
Datasheet: IGP03N120H2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.8526
10 : USD 1.491
100 : USD 1.1883
500 : USD 1.0407
1000 : USD 0.9149
2500 : USD 0.9149
5000 : USD 0.9125
10000 : USD 0.8426
25000 : USD 0.8391
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
Package / Case
Packaging
Technology
Mounting Style
Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
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We are delighted to provide the IGP03N120H2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IGP03N120H2 and other electronic components in the IGBT Transistors category and beyond.

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IGP03N120H2 IGW03N120H2 HighSpeed 2-Technology C Designed for: - SMPS - Lamp Ballast G E - ZVS-Converter - optimised for soft-switching / resonant topologies nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits PG-TO-247-3 - temperature stable behavior - parallel switching capability - tight parameter distribution - E optimized for I =3A off C PG-TO220-3-1 2 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IGP03N120H2 IGW03N120H2 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 2.0 K/W thJC junction case Thermal resistance, R PG-TO-220-3-1 62 thJA junction ambient PG-TO-247-3 40 Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V V =0V, I =300A (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =3A CE(sat) GE C - 2.2 2.8 T =25C j - 2.5 - T =150C j V = 10V, I =3A, GE C T =25C j - 2.4 - Gate-emitter threshold voltage V 2.1 3 3.9 GE(th) I =90A,V =V C CE GE Zero gate voltage collector current I V =1200V,V =0V A CES CE GE - - 20 T =25C j - - 80 T =150C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =3A - 2 - S fs CE C Dynamic Characteristic Input capacitance C V =25V, - 205 - pF iss CE Output capacitance C - V =0V, 24 - GE oss f=1MHz Reverse transfer capacitance C - 7 - rss Gate charge Q V =960V, I =3A - 22 - nC Gate CC C V =15V GE Internal emitter inductance L PG-TO-220-3-1 - 7 - nH E measured 5mm (0.197 in.) from case PG-TO-247-3 - 13 - 2 Rev. 2.6 Febr. 08 Power Semiconductors

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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