NGTB40N65IHRTG IGBT with Monolithic Reverse Conducting Diode This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction www.onsemi.com losses (low V ) and is well suited for resonant or soft switching CEsat applications. 40 A, 650 V Features V = 1.55 V CEsat Extremely Efficient Trench with Fieldstop Technology E = 0.42 mJ Low Conduction Design for Soft Switching Application off Reduced Power Dissipation in Inducting Heating Application C Reliable and Cost Effective Single Die Solution This is a PbFree Device Typical Applications G Inductive Heating Air Conditioning PFC E Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 650 V CES Collector current I A C T = 25C 80 C G T = 100C 40 C TO3P C Pulsed collector current, T limited I 160 A CASE 340AB pulse CM by T , 10 s pulse, V = 15 V Jmax GE E Diode forward current I A F T = 25C 80 C MARKING DIAGRAM T = 100C 40 C Diode pulsed current, T limited I 160 A pulse FM by T , 10 s pulse, V = 0 V Jmax GE Power Dissipation P W D 40N65HG T = 25C 405 C AYWW T = 100C 202 C Operating junction temperature range T 40 to +175 C J Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C 40N65H = Specific Device Code SLD from case for 5 seconds G = PbFree Package A = Assembly Location Stresses exceeding those listed in the Maximum Ratings table may damage the Y = Year device. If any of these limits are exceeded, device functionality should not be WW = Work Week assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping NGTB40N65IHRTG TO3P 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2017 Rev. 1 NGTB40N65IHRTG/DNGTB40N65IHRTG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase R 0.37 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 650 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.55 1.7 V GE C CEsat V = 15 V, I = 40 A, T = 175C 1.95 GE C J Gateemitter threshold voltage V 4.5 5.5 6.5 V V = V , I = 350 A GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 650 V I 0.3 mA GE CE CES emitter shortcircuited V = 0 V, V = 1200 V, T 175C 1.0 GE CE J = Gate leakage current, collectoremitter V = 20 V, V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 4628 pF ies Output capacitance C 148 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 126 res Gate charge total Q 190 nC g Gate to emitter charge Q 38 V = 400 V, I = 40 A, V = 15 V ge CE C GE Gate to collector charge Q 90 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnoff delay time t 197 ns d(off) T = 25C J V = 400 V, I = 40 A CC C Fall time t 74 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.42 mJ GE off ns Turnoff delay time t 210 d(off) T = 175C J V = 400 V, I = 40 A CC C Fall time t 106 f R = 10 g V = 0 V/ 15V Turnoff switching loss E 0.7 mJ GE off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 1.50 1.80 V GE F F V = 0 V, I = 40 A, T = 175C 1.70 GE F J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2