NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.onsemi.com and fast copackaged free wheeling diode with a low forward voltage. Features 50 A, 600 V Extremely Efficient Trench with Field Stop Technology V = 1.80 V CEsat T = 175C Jmax E = 0.46 mJ Soft Fast Reverse Recovery Diode OFF Optimized for High Speed Switching C 5 s ShortCircuit Capability This is a PbFree Device Typical Applications G Solar Inverters Uninterruptible Power Supplies (UPS) E Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TO247 G TC = 25C 100 CASE 340AL C TC = 100C 50 E Diode Forward Current I A F TC = 25C 100 TC = 100C 50 MARKING DIAGRAM Diode Pulsed Current I 200 A FM T Limited by T Max PULSE J Pulsed collector current, T I 200 A pulse CM limited by T Jmax Shortcircuit withstand time t 5 s SC 50N60FL2 V = 15 V, V = 400 V, GE CE AYWWG T +150C J Gateemitter voltage V 20 V GE V Transient gateemitter voltage 30 (T = 5 s, D < 0.10) PULSE Power Dissipation P W D TC = 25C 417 A = Assembly Location TC = 100C 208 Y = Year Operating junction temperature T 55 to +175 C J WW = Work Week range G = PbFree Package Storage temperature range T 55 to +175 C stg Lead temperature for soldering, 1/8 T 260 C SLD ORDERING INFORMATION from case for 5 seconds Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NGTB50N60FL2WG TO247 30 Units / Rail assumed, damage may occur and reliability may be affected. (PbFree) Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 5 NGTB50N60FL2W/DNGTB50N60FL2WG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.36 C/W JC Thermal resistance junctiontocase, for Diode R 0.60 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V 600 V V = 0 V, I = 500 A GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 50 A V 1.50 1.80 2.00 V GE C CEsat V = 15 V, I = 50 A, T = 175C 2.19 GE C J Gateemitter threshold voltage V = V , I = 350 A V 4.5 5.5 6.5 V GE CE C GE(th) Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.5 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 4.0 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 200 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 5328 pF ies Output capacitance V = 20 V, V = 0 V, f = 1 MHz C 252 CE GE oes Reverse transfer capacitance C 148 res Gate charge total Q 220 nC g Gate to emitter charge Q 52 V = 480 V, I = 50 A, V = 15 V CE C GE ge Gate to collector charge Q 116 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 100 ns d(on) Rise time t 47 r Turnoff delay time t 237 T = 25C J d(off) V = 400 V, I = 50 A CC C Fall time t 67 f R = 10 g Turnon switching loss V = 0 V/ 15 V E 1.50 mJ GE on Turnoff switching loss E 0.46 off Total switching loss E 1.96 ts Turnon delay time t 90 ns d(on) Rise time t 49 r Turnoff delay time t 245 T = 150C J d(off) V = 400 V, I = 50 A CC C Fall time t 96 f R = 10 g Turnon switching loss E 1.90 V = 0 V/ 15 V mJ GE on Turnoff switching loss E 0.83 off Total switching loss E 2.73 ts DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 50 A V 2.10 2.90 V GE F F V = 0 V, I = 50 A, T = 175C 2.20 GE F J Reverse recovery time t 94 ns rr T = 25C J Reverse recovery charge Q 0.45 C I = 50 A, V = 400 V F R rr di /dt = 200 A/ s F Reverse recovery current I 8 A rrm Reverse recovery time t 170 ns rr T = 175C J Reverse recovery charge Q 1.40 I = 50 A, V = 400 V C rr F R di /dt = 200 A/ s F Reverse recovery current I 13 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2