DATA SHEET www.onsemi.com IGBT 45 A, 600 V V = 2.2 V CEsat NGTB45N60SWG E = 0.55 mJ off This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides C superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low forward voltage. G Features E Low Saturation Voltage using Trench with Fieldstop Technology Low Switching Loss Reduces System Power Dissipation Low Gate Charge Soft, Fast Free Wheeling Diode These are PbFree Devices G C Typical Applications E Inductive Heating TO247 CASE 340AM Soft Switching ABSOLUTE MAXIMUM RATINGS MARKING DIAGRAM Rating Symbol Value Unit Collectoremitter Voltage V 600 V CES Collector Current I A C T = 25C 90 C T = 100C 45 C 45N60S AYWWG Pulsed Collector Current, T I 180 A pulse CM Limited by T Jmax Diode Forward Current I A F T = 25C 90 C T = 100C 45 C Diode Pulsed Current, T Limited I 180 A pulse FM by T Jmax 45N60S = Specific Device Code Gateemitter Voltage V 20 V A = Assembly Location GE Y = Year Power Dissipation P W D WW = Work Week T = 25C 250 C G = PbFree Package T = 100C 50 C Operating Junction Temperature T 55 to +150 C J Range ORDERING INFORMATION Storage Temperature Range T 55 to +150 C stg Lead temperature for soldering, 1/8 T 260 C Device Package Shipping SLD from case for 5 seconds NGTB45N60SWG TO247 30 Units / Rail Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: October, 2021 Rev. 2 NGTB45N60SW/DNGTB45N60SWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.87 C/W JC Thermal resistance junctiontocase, for Diode R 1.47 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 45 A V 2.2 2.4 V GE C CEsat V = 15 V, I = 45 A, T = 150C 2.6 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3100 pF ies Output capacitance C 120 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 80 res Gate charge total Q 134 nC g Gate to emitter charge Q 27 V = 480 V, I = 45 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 70 ns d(on) Rise time t 34 r T = 25C J V = 400 V, I = 45 A CC C Turnoff delay time t 144 d(off) R = 10 g V = 0 V/ 15 V Fall time GE t 68 f Turnoff switching loss E 0.55 mJ off Turnon delay time t 70 ns d(on) Rise time t 39 r T = 150C J V = 400 V, I = 45 A CC C Turnoff delay time t 151 d(off) R = 10 g V = 0 V/ 15 V Fall time GE t 88 f Turnoff switching loss E 0.89 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 20 A V 1.1 1.4 V GE F F V = 0 V, I = 20 A, T = 150C 1.03 GE F J Reverse recovery time T = 25C t 376 ns J rr I = 25 A, V = 200 V F R Reverse recovery charge Q 4145 nc di /dt = 200 A/ s rr F Reverse recovery current I 22 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2