AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C V = 600V CES Low V Trench IGBT Technology CE (on) Low Switching Losses I = 24A C(Nominal) 5s short circuit SOA t 5s, T = 175C G SC J(max) Square RBSOA 100% of the parts tested for I LM E V typ. = 1.57V CE(on) Positive V Temperature Coefficient. CE (on) n-channel Ultra Fast Soft Recovery Co-pak Diode C C Tighter Distribution of Parameters C Lead-Free, RoHS Compliant Automotive Qualified * E C E E G Benefits C C G G High Efficiency in a Wide Range of Applications AUIRGS4062D1 AUIRGSL4062D1 AUIRGB4062D1 Suitable for a Wide Range of Switching Frequencies due to 2 D Pak TO-262Pak TO-220AB Low V and Low Switching Losses CE (ON) Rugged Transient Performance for Increased Reliability G C E Excellent Current Sharing in Parallel Operation Gate Collector Emitter Low EMI Applications Air Conditioning Compressor Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGB4062D1 TO-220 Tube 50 AUIRGB4062D1 AUIRGSL4062D1 TO-262 Tube 50 AUIRGSL4062D1 Tube 50 AUIRGS4062D1 2 AUIRGS4062D1 D Pak Tape and Reel Left 800 AUIRGS4062D1TRL Tape and Reel Right 800 AUIRGS4062D1TRR Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated condi- tions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless otherwise specified. A Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 59 C C I T = 100C Continuous Collector Current 39 C C I Nominal Current 24 C (Nominal) I Pulse Collector Current V =15V 72 CM GE A I Clamped Inductive Load Current V =20V 96 LM GE I T = 25C Diode Continuous Forward Current 59 F C I T = 100C Diode Continuous Forward Current 39 F C I Maximum Repetitive Forward Current 96 FM V Continuous Gate-to-Emitter Voltage 20 V GE Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 246 D C W P T = 100C Maximum Power Dissipation 123 D C T Operating Junction and -55 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in.(1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case (IGBT) 0.61 R (IGBT) JC Thermal Resistance Junction-to-Case (Diode) 1.2 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 62 R JA *Qualification standards can be found at www.infineon.com 1 2017-08-31 AUIRGB/S/SL4062D1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.3 V/C V = 0V, I = 10mA (25C-175C) V / T (BR)CES J GE C 1.57 1.77 I = 24A, V = 15V, T = 25C C GE J 1.87 I = 24A, V = 15V, T = 150C V Collector-to-Emitter Saturation Voltage V C GE J CE(on) 1.94 I = 24A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 700A CE GE C GE(th) Threshold Voltage temp. coefficient -17 mV/C V = V , I = 1.0mA (25C-175C) V /TJ CE GE C GE(th) Forward Transconductance 12 S V = 50V, I = 24A,PW = 20s gfe CE C Collector-to-Emitter Leakage Current 1.0 25 A V = 0V, V = 600V GE CE I CES 3.5 V = 0V, V = 600V,T = 175C mA GE CE J 1.57 I = 24A F 1.40 I = 19A V Diode Forward Voltage Drop V F FM 1.47 I = 24A, T = 175C F J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GE CE GES Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 51 77 I = 24A g C Q Gate-to-Emitter Charge (turn-on) 14 21 V = 15V ge nC GE V = 400V Q Gate-to-Collector Charge (turn-on) 21 32 gc CC E Turn-On Switching Loss 532 754 on E Turn-Off Switching Loss 311 526 off J I = 24A, V = 400V, E Total Switching Loss 843 1280 C CC total t Turn-On delay time 19 36 d(on) V = +15V,R = 10 , GE G t Rise time 24 41 L = 210 H, T = 25C r J ns t Turn-Off delay time 90 109 Energy losses include tail & diode d(off) t Fall time 23 40 reverse recovery f E Turn-On Switching Loss 726 on E Turn-Off Switching Loss 549 J off E Total Switching Loss 1275 I = 24A, V = 400V, total C CC t Turn-On delay time 12 V = +15V,R = 10 , d(on) GE G t Rise time 23 L = 210 H, T = 175C r J ns t Turn-Off delay time 92 Energy losses include tail & diode d(off) t Fall time 84 reverse recovery f C Input Capacitance 1487 V = 0V ies GE C Output Capacitance 118 V = 30V pF CC oes C Reverse Transfer Capacitance 44 f = 1.0Mhz res T = 175C, I = 96A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 10 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp 600V CC 5 s Rg = 10 , V = +15V to 0V GE 773 T = 175C E Reverse Recovery Energy of the Diode J J rec V = 400V,I = 24A,V = 15V, Diode Reverse Recovery Time 102 ns t CC F GE rr 32 R = 10 , L = 210 H I Peak Reverse Recovery Current A G rr Notes: V = 80% (V ), V = 20V, L = 210H, R = 50. CC CES GE G Pulse width limited by max. junction temperature. R is measured at T of approximately 90C. J Maximum limits are based on statistical sample size characterization. 2 2017-08-31