X-On Electronics has gained recognition as a prominent supplier of IHW20N135R5XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IHW20N135R5XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IHW20N135R5XKSA1 Infineon

IHW20N135R5XKSA1 electronic component of Infineon
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Part No.IHW20N135R5XKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors IGBT PRODUCTS TrenchStop RC
Datasheet: IHW20N135R5XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.355 ea
Line Total: USD 3.36 
Availability - 675
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
30
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1802
10 : USD 2.9749
25 : USD 2.3801
240 : USD 2.3562
480 : USD 2.1748

19
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 5.0128
10 : USD 4.3926
30 : USD 3.8564
100 : USD 3.4825
500 : USD 3.3107
1000 : USD 3.2325

675
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 3.355
10 : USD 3.19
25 : USD 2.288
100 : USD 2.222
240 : USD 2.2
480 : USD 1.969
1200 : USD 1.771

1
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 4.494
6 : USD 3.234
15 : USD 3.052
120 : USD 2.954

   
Manufacturer
Product Category
RoHS - XON
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Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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Mxhts
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We are delighted to provide the IHW20N135R5XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IHW20N135R5XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IHW20N135R5 Resonant Switching Series Reverse Conducting IGBT with monolithic body diode C Features: Offers high breakdown voltage of 1350V for improved reliability Powerful monolithic body diode with low forward voltage designed for soft commutation only TM TRENCHSTOP technology offering: G - very tight parameter distribution E - high ruggedness, temperature stable behavior - low V CEsat - easy parallel switching capability due to positive temperature coefficient in V CEsat Low EMI Qualified according to JESD-022 for target applications Pb-free lead plating RoHS compliant Halogen free (according to IEC 61249-2-21) Complete product spectrum and PSpice Models: IHW20N135R5 Resonant Switching Series Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .12 Testing Conditions 13 Revision History 14 Disclaimer .15 Datasheet 2 V 2.2 2019-09-19

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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