NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low www.onsemi.com forward voltage. 40 A, 600 V Features V = 2.0 V Low Saturation Voltage using Trench with Fieldstop Technology CEsat Low Switching Loss Reduces System Power Dissipation E = 0.4 mJ off Low Gate Charge C Soft, Fast Free Wheeling Diode These are PbFree Devices Typical Applications G Inductive Heating Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 80 TC = 100C 40 G TO247 Pulsed collector current, T I 200 A C pulse CM CASE 340AL E limited by T Jmax Diode forward current I A F TC = 25C 80 TC = 100C 40 MARKING DIAGRAM Diode pulsed current, T limited I 200 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Power Dissipation P W D TC = 25C 250 TC = 100C 50 40N60IHL AYWWG Operating junction temperature T 55 to +150 C J range Storage temperature range T 55 to +150 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTB40N60IHLWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2016 Rev. 1 NGTB40N60IHLW/DNGTB40N60IHLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.87 C/W JC Thermal resistance junctiontocase, for Diode R 1.46 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 2.0 2.4 V GE C CEsat V = 15 V, I = 40 A, T = 150C 2.6 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3100 pF ies Output capacitance C 120 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 80 res Gate charge total Q 130 nC g Gate to emitter charge Q 29 V = 480 V, I = 40 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 70 ns d(on) Rise time t 40 r T = 25C J V = 400 V, I = 40 A CC C Turnoff delay time t 140 d(off) R = 10 g V = 0 V/ 15V Fall time GE t 70 f Turnoff switching loss E 0.4 mJ off Turnon delay time t 70 ns d(on) Rise time t 40 r T = 150C J V = 400 V, I = 40 A CC C Turnoff delay time t 140 d(off) R = 10 g V = 0 V/ 15V Fall time GE t 90 f Turnoff switching loss E 0.8 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 1.3 1.5 V GE F F V = 0 V, I = 40 A, T = 150C 1.35 GE F J Reverse recovery time T = 25C t 400 ns J rr I = 40 A, V = 200 V F R Reverse recovery charge Q 5500 nc di /dt = 200 A/ s rr F Reverse recovery current I 25 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2