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X-On Electronics has gained recognition as a prominent supplier of NGTB40N60IHLWG IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. NGTB40N60IHLWG IGBT Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

NGTB40N60IHLWG ON Semiconductor

NGTB40N60IHLWG electronic component of ON Semiconductor
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See Product Specifications
Part No.NGTB40N60IHLWG
Manufacturer: ON Semiconductor
Category: IGBT Transistors
Description: IGBT Transistors IGBT, Field Stop (FS), 40 A, 600 V
Datasheet: NGTB40N60IHLWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 148
Multiples : 148
148 : USD 2.7525
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.1132
10 : USD 3.4959
25 : USD 3.4355
100 : USD 3.0262
250 : USD 2.8719
500 : USD 2.5565
1000 : USD 2.2423
2500 : USD 2.2118
5000 : USD 2.0894
N/A

Obsolete
   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Collector Emitter Voltage Vceo Max
Package Case
Brand
Collector Emitter Saturation Voltage
Gate Emitter Leakage Current
Pd Power Dissipation
Factory Pack Quantity :
Rohs Mouser
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NGTB40N60IHLWG from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NGTB40N60IHLWG and other electronic components in the IGBT Transistors category and beyond.

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NGTB40N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast copackaged free wheeling diode with a low www.onsemi.com forward voltage. 40 A, 600 V Features V = 2.0 V Low Saturation Voltage using Trench with Fieldstop Technology CEsat Low Switching Loss Reduces System Power Dissipation E = 0.4 mJ off Low Gate Charge C Soft, Fast Free Wheeling Diode These are PbFree Devices Typical Applications G Inductive Heating Soft Switching E ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collectoremitter voltage V 600 V CES Collector current I A C TC = 25C 80 TC = 100C 40 G TO247 Pulsed collector current, T I 200 A C pulse CM CASE 340AL E limited by T Jmax Diode forward current I A F TC = 25C 80 TC = 100C 40 MARKING DIAGRAM Diode pulsed current, T limited I 200 A pulse FM by T Jmax Gateemitter voltage V 20 V GE Power Dissipation P W D TC = 25C 250 TC = 100C 50 40N60IHL AYWWG Operating junction temperature T 55 to +150 C J range Storage temperature range T 55 to +150 C stg Lead temperature for soldering, 1/8 T 260 C SLD from case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NGTB40N60IHLWG TO247 30 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: September, 2016 Rev. 1 NGTB40N60IHLW/DNGTB40N60IHLWG THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.87 C/W JC Thermal resistance junctiontocase, for Diode R 1.46 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Test Conditions Symbol Min Typ Max Unit STATIC CHARACTERISTIC Collectoremitter breakdown voltage, V = 0 V, I = 500 A V 600 V GE C (BR)CES gateemitter shortcircuited Collectoremitter saturation voltage V = 15 V, I = 40 A V 2.0 2.4 V GE C CEsat V = 15 V, I = 40 A, T = 150C 2.6 GE C J Gateemitter threshold voltage V = V , I = 150 A V 4.5 5.5 6.5 V GE(th) GE CE C Collectoremitter cutoff current, gate V = 0 V, V = 600 V I 0.2 mA GE CE CES emitter shortcircuited V = 0 V, V = 600 V, T 150C 2 GE CE J = Gate leakage current, collectoremitter V = 20 V , V = 0 V I 100 nA GE CE GES shortcircuited DYNAMIC CHARACTERISTIC Input capacitance C 3100 pF ies Output capacitance C 120 V = 20 V, V = 0 V, f = 1 MHz oes CE GE Reverse transfer capacitance C 80 res Gate charge total Q 130 nC g Gate to emitter charge Q 29 V = 480 V, I = 40 A, V = 15 V ge CE C GE Gate to collector charge Q 67 gc SWITCHING CHARACTERISTIC, INDUCTIVE LOAD Turnon delay time t 70 ns d(on) Rise time t 40 r T = 25C J V = 400 V, I = 40 A CC C Turnoff delay time t 140 d(off) R = 10 g V = 0 V/ 15V Fall time GE t 70 f Turnoff switching loss E 0.4 mJ off Turnon delay time t 70 ns d(on) Rise time t 40 r T = 150C J V = 400 V, I = 40 A CC C Turnoff delay time t 140 d(off) R = 10 g V = 0 V/ 15V Fall time GE t 90 f Turnoff switching loss E 0.8 mJ off DIODE CHARACTERISTIC Forward voltage V = 0 V, I = 40 A V 1.3 1.5 V GE F F V = 0 V, I = 40 A, T = 150C 1.35 GE F J Reverse recovery time T = 25C t 400 ns J rr I = 40 A, V = 200 V F R Reverse recovery charge Q 5500 nc di /dt = 200 A/ s rr F Reverse recovery current I 25 A rrm Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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