STGB20V60DF STMicroelectronics

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature: T = 175 C J Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage: V = 1.8 V (typ.) CE(sat) TO-220 DPAK I = 20 A C TAB Tight parameters distribution Safe paralleling Low thermal resistance 3 3 2 2 Very fast soft recovery antiparallel diode 1 1 Lead free package TO-247 TO-3P Applications Figure 1. Internal schematic diagram Photovoltaic inverters Uninterruptible power supply Welding Power factor correction Very high frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGB20V60DF GB20V60DF DPAK Tape and reel STGP20V60DF GP20V60DF TO-220 Tube STGW20V60DF GW20V60DF TO-247 Tube STGWT20V60DF GWT20V60DF TO-3P Tube June 2013 DocID024360 Rev 3 1/23 This is information on a product in full production. www.st.com 23Contents STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 11 4 Package mechanical data 12 5 Packing mechanical data 20 6 Revision history . 22 2/23 DocID024360 Rev 3