STGB30H60DLFB STMicroelectronics

STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current 3 1 3 V = 1.55 V (typ.) I = 30 A CE(sat) C 2 2 D PAK 1 Low V soft recovery co-packaged diode F TO-247 Tight parameters distribution Safe paralleling Low thermal resistance Lead free package Figure 1. Internal schematic diagram Applications C (2, TAB) Microwave oven Resonant converters Description G (1) These devices are IGBTs developed using an advanced proprietary trench gate and field stop structure. The device is part of the newH series of IGBTs, which represent an optimum compromise between conduction and switching E (3) losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging 2 STGB30H60DLFB GB30H60DLFB D PAK Tape and reel STGW30H60DLFB GW30H60DLFB TO-247 Tube July 2014 DocID026409 Rev 2 1/20 This is information on a product in full production. www.st.com 20Contents STGB30H60DLFB, STGW30H60DLFB Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curve) . 6 3 Test circuits 11 4 Package mechanical data 12 2 4.1 D PAK, STGB30H60DLFB 12 4.2 TO-247, STGW30H60DLFB . 15 5 Packaging mechanical data 17 6 Revision history . 19 2/20 DocID026409 Rev 2