X-On Electronics has gained recognition as a prominent supplier of STGB15M65DF2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB15M65DF2 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGB15M65DF2 STMicroelectronics

STGB15M65DF2 electronic component of STMicroelectronics
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Part No.STGB15M65DF2
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
Datasheet: STGB15M65DF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 1.0248 ea
Line Total: USD 1024.8 
Availability - 2910
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
2910
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 1.0248
2000 : USD 0.974
5000 : USD 0.9629

1
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2338
10 : USD 1.1973
100 : USD 1.1134

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGB15M65DF2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB15M65DF2 and other electronic components in the IGBT Transistors category and beyond.

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STGB15M65DF2 Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a DPAK package Datasheet - production data Features 6 s of short-circuit withstand time TAB V = 1.55 V (typ.) I = 15 A CE(sat) C Tight parameter distribution Safer paralleling 2 Positive V temperature coefficient CE(sat) 3 Low thermal resistance 1 Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C D PAK Applications Motor control UPS Figure 1: Internal schematic diagram PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB15M65DF2 G15M65DF2 DPAK Tape and reel May 2017 DocID025356 Rev 4 1/19 www.st.com This is information on a product in full production. Contents STGB15M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 DPAK (TO-263) type A package information ................................. 13 4.2 DPAK type A packing information .................................................. 16 5 Revision history ............................................................................ 18 2/19 DocID025356 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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