STGB20NB37LZ N-CHANNEL CLAMPED 20A - DPAK INTERNALLY CLAMPED PowerMESH IGBT TYPE V V I CES CE(sat) C STGB20NB37LZ CLAMPED < 2.0 V20A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX T4 FOR ORDERING IN TAPE & DPAK REEL DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has de- signed an advanced family of IGBTs, the Power- MESH IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very pre- cise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS AUTOMOTIVE IGNITION ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING 2 STGB20NB37LZT4 GB20NB37LZ TAPE & REEL D PAK September 2003 1/8STGB20NB37LZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V =0) CLAMPED V CES GS V Emitter-Collector Voltage 20 V ECR V Gate-Emitter Voltage CLAMPED V GE I Collector Current (continuos) at T = 25C 40 A C C I Collector Current (continuos) at T = 100C 20 A C C I ( ) Collector Current (pulsed) 80 A CM Eas Single Pulse Energy Tc = 25C 700 mJ P Total Dissipation at T = 25C 200 W TOT C Derating Factor 1.33 W/C E ESD (Human Body Model) 8 KV SD T Storage Temperature stg 55 to 175 C T Max. Operating Junction Temperature j ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.75 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit BV I =2mA, V = 0, Tc= - 40C Clamped Voltage 405 V (CES) C GE I =2mA, V =0, Tc=25C 375 400 425 V C GE I =2mA, V = 0, Tc= 150C 395 V C GE BV Emitter Collector Break-down I = 75 mA, Tc = 25C 20 28 V (ECR) C Voltage BV Gate Emitter Break-down I =2mA 12 14 16 V GE G Voltage I Collector cut-off Current V =15V,V =0 ,T =150 C 10 A CES CE GE C (V =0) GE V =200 V, V =0 ,T =150C 100 A CE GE C I Gate-Emitter Leakage V =10V, V = 0 300 660 1000 A GES GE CE Current (V =0) CE R Gate Emitter Resistance 10 15 30 K GE ON (*) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I = 250A, Tc=-40C 1.2 V GE(th) CE GE C V =V ,I = 250A, Tc= 25C1V1.4 2 CE GE C V =V ,I = 250A, Tc=150C 0.6 V CE GE C V Collector-Emitter Saturation V =4.5V, I = 10 A, Tc= 25C 1.1 1.8 V CE(SAT) CE C Voltage V =4.5V, I = 10 A, Tc= 150C 1.0 1.7 V CE C V =4.5V, I = 20 A, Tc= 25C 1.35 2.0 V CE C V =4.5V, I = 20 A, Tc= 150C 1.25 2.0 V CE C 2/8