STGB10NB40LZT4 STMicroelectronics

STGB10NB40LZT4 Automotive-grade 10 A, 410 V internally clamped IGBT Datasheet - production data Features Order code V V CES CE(sat)max. IC TAB STGB10NB40LZT4 Clamped 1.8 V 20 A 2 AEC-Q101 qualified 3 Low threshold voltage 1 Low on-voltage drop Low gate charge D PAK High current capability High voltage clamping feature Applications Figure 1: Internal schematic diagram Switching applications C (2,TAB) Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, PowerMESH with an overall outstanding G (1) performance. The built-in collector-gate Zener RGE exhibits a very precise active clamping while the gate-emitter Zener supplies the ESD protection. E (3) IGBTG1C2TABE32Zener Table 1: Device summary Order code Marking Package Packing STGB10NB40LZT4 GB10NB40LZ DPAK Tape and reel March 2017 DocID030391 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STGB10NB40LZT4 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 DPAK (TO-263) type A package information ................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID030391 Rev 1