STGB20H60DF STMicroelectronics

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 Safe paralleling 3 2 2 1 1 Low thermal resistance TO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diode TAB Applications 3 1 Motor control DPAK UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an C (2, TAB) advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGB20H60DF GB20H60DF DPAK Tape and reel STGF20H60DF GF20H60DF TO-220FP Tube STGP20H60DF GP20H60DF TO-220 Tube June 2013 DocID023740 Rev 4 1/22 This is information on a product in full production. www.st.com 22Contents STGB20H60DF, STGF20H60DF, STGP20H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 12 4 Package mechanical data 13 5 Packaging mechanical data 19 6 Revision history . 21 2/22 DocID023740 Rev 4