STGB20V60F STMicroelectronics

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features Maximum junction temperature: T = 175 C J Very high speed switching series TAB TAB Tail-less switching off Low saturation voltage: V = 1.8 V (typ.) CE(sat) I = 20 A C 3 3 Tight parameters distribution 2 1 1 Safe paralleling 2 D PAK TO-220 Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Photovoltaic inverters C (2, TAB) Uninterruptible power supply Welding Power factor correction Very high frequency converters G (1) Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the series of IGBTs, which represent an optimum compromise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging 2 STGB20V60F GB20V60F D PAK Tape and reel STGP20V60F GP20V60F TO-220 Tube July 2013 DocID024890 Rev 1 1/18 This is information on a product in full production. www.st.com 18Contents STGB20V60F, STGP20V60F Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 10 4 Package mechanical data 11 5 Packaging mechanical data 15 6 Revision history . 17 2/18 DocID024890 Rev 1