STGB10H60DF, STGF10H60DF, STGP10H60DF Datasheet Trench gate field-stop 600 V, 10 A high speed H series IGBT Features TAB High speed switching 3 1 Tight parameters distribution 2 D PAK 3 2 1 Safe paralleling TO-220FP TAB Low thermal resistance Short-circuit rated 3 2 Ultrafast soft recovery antiparallel diode 1 TO-220 Applications C(2, TAB) Motor control UPS PFC G(1) Description These devices are IGBTs developed using an advanced proprietary trench gate field- E(3) stop structure. These devices are part of the H series of IGBTs, which represents an NG1E3C2T optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB10H60DF STGF10H60DF STGP10H60DF DS9880 - Rev 4 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGB10H60DF, STGF10H60DF, STGP10H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 TO-220FP V Collector-emitter voltage (V = 0 V) 600 V CES GE (1) Continuous collector current at T = 25 C 20 C 20 I A C (1) Continuous collector current at T = 100 C 10 C 10 (2) I Pulsed collector current 40 40 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 (1) Continuous forward current T = 25 C 20 C 20 I A F (1) Continuous forward current at T = 100 C 10 C 10 (2) I Pulsed forward current 40 40 A FP Insulation withstand voltage (RMS) from all three leads to V 2.5 kV ISO external heat sink (t = 1 s T = 25 C) c P Total power dissipation at T = 25 C 115 30 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220FP D PAK, TO-220 R Thermal resistance junction-case IGBT 1.3 5 C/W thJC R Thermal resistance junction-case diode 2.78 6.25 C/W thJC R Thermal resistance junction-ambient 62.5 62.5 C/W thJA DS9880 - Rev 4 page 2/24