STGF7NB60SL N-CHANNEL 7A - 600V - TO-220FP PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE V V (Max) I CES CE(sat) C 25C 100C STGF7NB60SL 600 V < 1.6 V 7 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 DESCRIPTION 2 1 Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the Pow- erMESH IGBTs, with outstanding performances. The suffix S identifies a family optimized achieve minimum on-voltage drop for low frequency appli- Figure 2: Internal Schematic Diagram cations (<1kHz). APPLICATIONS LIGHT DIMMER STATIC RELAYS Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STGF7NB60SL GF7NB60SL TO-220FP TUBE Rev.3 September 2004 1/9STGF7NB60SL Table 3: Absolute Maximum ratings Symbol Parameter Value Symbol V Collector-Emitter Voltage (V = 0) 600 V CES GS V V Reverse Battery Protection 20 ECR V V Gate-Emitter Voltage 20 GE I A Collector Current (continuous) at 25C15 C I A Collector Current (continuous) at 100C7 C I (1) Collector Current (pulsed) 20 A CM P Total Dissipation at T = 25C 25 W TOT C Derating Factor 0.2 W/C V Insulation Withstand Voltage A.C. 2500 V ISO T Storage Temperature stg 55 to 150 C T Operating Junction Temperature j (1)Pulse width limited by max. junction temperature. Table 4: Thermal Data Rthj-case Thermal Resistance Junction-case Max 5 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W ELECTRICAL CHARACTERISTICS (T =25C UNLESS OTHERWISE SPECIFIED) CASE Table 5: Off Symbol Parameter Test Conditions Min. Typ. Max. Unit V Collectro-Emitter Breakdown I = 250 A, V = 0 600 V BR(CES) C GE Voltage V Emitter-Collector Breakdown I = 1mA, V = 0 20 V BR(ECS) C GE Voltage I Collector-Emitter Leakage V = Max Rating CES GE Current (V = 0) Tc=25C 10 A CE Tc=125C 100 A I Gate-Emitter Leakage V = 20 V , V = 0 100 nA GES GE CE Current (V = 0) CE Table 6: On Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250 A 1.2 2.4 V GE(th) CE GE C V Collector-Emitter Saturation V =4.5 V, I = 7A, Tj= 25C 1.2 1.6 V CE(SAT) GE C Voltage V =4.5 V, I = 7A, Tj= 125C 1.1 V GE C 2/9