STGFW30H65FB STMicroelectronics

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 111 V = 1.55 V (typ.) at I = 30 A 3 CE(sat) C 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applications C(2, TAB) Photovoltaic inverters Power factor correction Welding G(1) High-frequency converters Description E(3) G1C2TE3 These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status links STGFW30H65FB STGW30H65FB DS10155 - Rev 7 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGFW30H65FB, STGW30H65FB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit TO-247 TO-3PF V Collector-emitter voltage (V = 0 V) 650 V CES GE Continuous collector current at T = 25 C 60 A C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 260 92 W TOT C Insulation withstand voltage (RMS) from all three leads to external V 3.5 kV ISO heat sink (t = 1 s T = 25 C) c T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247 TO-3PF R Thermal resistance, junction-to-case 0.58 1.63 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS10155 - Rev 7 page 2/18