STGD5NB120SZT4 STMicroelectronics

STGD5NB120SZ Datasheet 5 A, 1200 V, low drop internally clamped IGBT Features Low on-voltage drop (V ) CE(sat) TAB High current capability 3 2 High voltage clamping 1 DPAK Applications , Low switching frequency applications Description This device is low drop internally clamped IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Product status link STGD5NB120SZ Product summary Order code STGD5NB120SZT4 Marking GD5NB120SZ Package DPAK Packing Tape and reel DS3341 - Rev 9 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGD5NB120SZ Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 10 C I A C Continuous collector current at T = 100 C 5 C (1) I Pulsed collector current 10 A CP (2) I Turn-off latching current 10 A CL V Gate-emitter voltage 20 V GE V Emitter-collector voltage 20 V ECR P Total power dissipation at T = 25 C 75 W TOT C T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width is limited by maximum junction temperature 2. V = 80% V , V = 15 V, R = 10 , T = 150 C CLAMP CES GE G J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.67 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA DS3341 - Rev 9 page 2/18