X-On Electronics has gained recognition as a prominent supplier of STGD5NB120SZT4 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGD5NB120SZT4 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGD5NB120SZT4 STMicroelectronics

STGD5NB120SZT4 electronic component of STMicroelectronics
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Part No.STGD5NB120SZT4
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: Transistor: IGBT; 1200V; 5A; 75W; DPAK
Datasheet: STGD5NB120SZT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.6976 ea
Line Total: USD 1.7 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.8953

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.6976
10 : USD 1.614
25 : USD 1.4035
100 : USD 1.2701
250 : USD 1.1366
500 : USD 1.1139
1000 : USD 1.1139
3000 : USD 1.1139

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.3216

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 1.2059

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 2.808
10 : USD 1.035
100 : USD 0.8694
250 : USD 0.8478
500 : USD 0.7938
1000 : USD 0.7074
2500 : USD 0.7074
5000 : USD 0.6966
10000 : USD 0.6685

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7127
5 : USD 1.4697
12 : USD 1.2723
32 : USD 1.2027
250 : USD 1.1555

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 7
Multiples : 1
7 : USD 1.6976
10 : USD 1.614
25 : USD 1.4035
100 : USD 1.2701
250 : USD 1.1366
500 : USD 1.1139

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8
Multiples : 1
8 : USD 1.1022
10 : USD 1.037
25 : USD 1.037
100 : USD 1.037

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.9808

   
Manufacturer
Product Category
Power Dissipation
Case
Mounting
Kind Of Package
Type Of Transistor
Pulsed Collector Current
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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We are delighted to provide the STGD5NB120SZT4 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGD5NB120SZT4 and other electronic components in the IGBT Transistors category and beyond.

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STGD5NB120SZ Datasheet 5 A, 1200 V, low drop internally clamped IGBT Features Low on-voltage drop (V ) CE(sat) TAB High current capability 3 2 High voltage clamping 1 DPAK Applications , Low switching frequency applications Description This device is low drop internally clamped IGBT developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. Product status link STGD5NB120SZ Product summary Order code STGD5NB120SZT4 Marking GD5NB120SZ Package DPAK Packing Tape and reel DS3341 - Rev 9 - June 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGD5NB120SZ Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 10 C I A C Continuous collector current at T = 100 C 5 C (1) I Pulsed collector current 10 A CP (2) I Turn-off latching current 10 A CL V Gate-emitter voltage 20 V GE V Emitter-collector voltage 20 V ECR P Total power dissipation at T = 25 C 75 W TOT C T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width is limited by maximum junction temperature 2. V = 80% V , V = 15 V, R = 10 , T = 150 C CLAMP CES GE G J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-case 1.67 C/W thJC R Thermal resistance, junction-to-ambient 100 C/W thJA DS3341 - Rev 9 page 2/18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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