X-On Electronics has gained recognition as a prominent supplier of STGE50NC60WD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGE50NC60WD IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGE50NC60WD STMicroelectronics

Name: STGE50NC60WD
Brand: STMicroelectronics
SKU: STGE50NC60WD_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGE50NC60WD electronic component of STMicroelectronics

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Part No.	STGE50NC60WD
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	IGBT Transistors N-Ch 600volt 50 Amp
Datasheet:	STGE50NC60WD Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

STGE50NC60WD More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 26.2125	N/A Obsolete

0 MOQ : 100 Multiples : 1	100 : USD 18.2982 300 : USD 17.6491 500 : USD 17.6491 1000 : USD 16.2999	N/A Obsolete

0 MOQ : 2 Multiples : 1	2 : USD 29.4521 10 : USD 29.166 25 : USD 28.8799	N/A Obsolete

We are delighted to provide the STGE50NC60WD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGE50NC60WD and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

STGE50NC60WD N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESH IGBT Features V (Max) I CE(sat) C Type V CES 25C 100C STGE50NC60WD 600V 2.5V 50A High current capability High frequency operation Low C /C ratio (no cross-conduction RES IES ISOTOP susceptibility Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Figure 1. Internal schematic diagram designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix W identifies a family optimized for very high frequency applications. Applications Very high frequency inverters HF, SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Welding Table 1. Device summary Order code Marking Package Packaging STGE50NC60WD GE50NC60WD ISOTOP Tube July 2007 Rev 2 1/14 www.st.com 14Contents STGE50NC60WD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Revision History . 13 2/14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Dual Emitter Single Dual Emitter
Collector- Emitter Voltage VCEO Max 600 V 600 V
Collector-Emitter Saturation Voltage 2.5 V 2.5 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 50 A 50 A
Gate-Emitter Leakage Current 100 nA 100 nA
Power Dissipation 260 W 260 W
Package / Case ISO TO P - 4 ISO TO P - 4
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 260 W 260 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Series Stge50nc60wd Stge50nc60wd
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 10 10
Height 9.1 mm 9.1 mm
Length 38.2 mm 38.2 mm
Width 25.5 mm 25.5 mm
Cnhts 8541100000 8541100000
Hts Code 8541290075 8541290075
Mxhts 85411001 85411001
Product Type Igbt Transistors Igbt Transistors
Subcategory Igbts Igbts
Taric 8541100000 8541100000