X-On Electronics has gained recognition as a prominent supplier of STGD5H60DF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGD5H60DF IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGD5H60DF STMicroelectronics

STGD5H60DF electronic component of STMicroelectronics
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Part No.STGD5H60DF
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Datasheet: STGD5H60DF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 1.1992 ea
Line Total: USD 6 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.4428
5000 : USD 0.442

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 5
Multiples : 1
5 : USD 1.1992
50 : USD 1.0319
100 : USD 0.9009
500 : USD 0.7633
1000 : USD 0.5977

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.1448
50 : USD 0.9557
750 : USD 0.773

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.7398
10 : USD 0.8458
100 : USD 0.5033
500 : USD 0.4546
1000 : USD 0.3925
5000 : USD 0.3915
10000 : USD 0.3728
25000 : USD 0.3624

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Continuous Collector Current
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STGD5H60DF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGD5H60DF and other electronic components in the IGBT Transistors category and beyond.

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STGB5H60DF, STGD5H60DF STGF5H60DF, STGP5H60DF Datasheet Trench gate field-stop 600 V, 5 A high speed H series IGBT Features TAB TAB High-speed switching 2 3 3 1 1 2 DPAK Tight parameter distribution D PAK Safe paralleling TAB Low thermal resistance Short-circuit rated 3 2 3 1 Ultrafast soft recovery antiparallel diode 2 1 TO-220 TO-220FP Applications C(2, TAB) Motor control UPS PFC G(1) Description These devices are IGBTs developed using an advanced proprietary trench gate field- E(3) stop structure. These devices are part of the H series of IGBTs, which represents an NG1E3C2T optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB5H60DF STGD5H60DF STGF5H60DF STGP5H60DF DS10745 - Rev 5 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit 2 D PAK, TO-220 DPAK TO-220FP V Collector-emitter voltage (V = 0) 600 V CES GE (1) Continuous collector current at T = 25 C 10 C 10 I A C (1) Continuous collector current at T = 100 C 5 C 5 (2) (1) I Pulsed collector current 20 20 A CP V Gate-emitter voltage 20 V GE (1) Continuous forward current T = 25 C 10 10 C I A F (1) Continuous forward current at T = 100 C 5 5 C (2) (1) I Pulsed forward current 20 A 20 FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2500 V ISO (t = 1 s T = 25 C) c P Total power dissipation at T = 25 C 88 83 24 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit 2 DPAK TO-220FP D PAK, TO-220 R Thermal resistance junction-case IGBT 1.7 1.8 6.2 C/W thJC R Thermal resistance junction-case diode 4 4.5 7 C/W thJC R Thermal resistance junction-ambient 62.5 100 62.5 C/W thJA DS10745 - Rev 5 page 2/31

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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