X-On Electronics has gained recognition as a prominent supplier of STGB30H60DFB IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGB30H60DFB IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGB30H60DFB STMicroelectronics

STGB30H60DFB electronic component of STMicroelectronics
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Part No.STGB30H60DFB
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
Datasheet: STGB30H60DFB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.2319 ea
Line Total: USD 927.6 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.8352

0
Ship by Wed. 25 Dec to Tue. 31 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.2319

0
Ship by Wed. 01 Jan to Mon. 06 Jan
MOQ : 1
Multiples : 1
1 : USD 5.4695
10 : USD 5.3421
30 : USD 5.2566
100 : USD 5.1709

0
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 7.9216
10 : USD 2.8578
25 : USD 2.6974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STGB30H60DFB from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGB30H60DFB and other electronic components in the IGBT Transistors category and beyond.

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STGB30H60DFB, STGP30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J TAB TAB High speed switching series Minimized tail current 3 Low saturation voltage: V = 1.55 V (typ.) I = 30 A CE(sat) C 1 3 2 D PAK TO-220 2 Tight parameter distribution 1 Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGB30H60DFB STGP30H60DFB DS10468 - Rev 3 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGB30H60DFB, STGP30H60DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 60 C I F Continuous forward current at T = 100 C 30 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 62.5 thJA DS10468 - Rev 3 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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