STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Features TAB Maximum junction temperature: T = 175 C J Tail-less switching off 3 3 1 2 2 1 V = 1.8 V (typ.) I = 40 A CE(sat) C D PAK TO-3PF Tight parameters distribution TAB Safe paralleling Low thermal resistance 3 3 2 2 1 1 TO-220 TO-247 Applications C(2, TAB) Welding Power factor correction UPS Solar inverters G(1) Chargers Description E(3) G1C2TABE3 NO DIODE These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGB40V60F STGFW40V60F STGP40V60F STGW40V60F DS9698 - Rev 3 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGB40V60F, STGFW40V60F, STGP40V60F, STGW40V60F Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Value Symbol Parameter Unit DPAK, TO-247, TO-3PF TO-3P V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 80 A C I C Continuous collector current at T = 100 C 40 A C (1) I Pulsed collector current 160 A CP V Gate-emitter voltage 20 V GE P Total power dissipation at T = 25 C 283 98.5 W TOT C Insulation withstand voltage (RMS) from all three leads to V 3.5 kV ISO external heat sink (t = 1 s T = 25 C) C T Storage temperature range -55 to 150 C stg T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Value Symbol Parameter Unit TO-247, TO-3P TO-3PF R Thermal resistance, junction-to-case 0.53 1.52 C/W thJC R Thermal resistance, junction-to-ambient 50 C/W thJA DS9698 - Rev 3 page 2/25