STGD10HF60KD STMicroelectronics

STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data Features Designed for automotive applications and AEC-Q101 qualified TAB Low on-voltage drop (V ) CE(sat) 3 Low C / C ratio (no cross conduction res ies 1 susceptibility) Switching losses include diode recovery energy DPAK Short-circuit rated Very soft Ultrafast recovery anti-parallel diode Applications High frequency inverters Figure 1. Internal schematic diagram SMPS and PFC in both hard switch and resonant topologies Motor drives Injection systems Description This device utilizes the advanced PowerMESH process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies. Table 1. Device summary Order code Marking Package Packaging STGD10HF60KD GD10HF60KD DPAK Tape and reel September 2015 DocID022874 Rev 3 1/21 This is information on a product in full production. www.st.comContents STGD10HF60KD Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 13 4 Package mechanical data 14 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID022874 Rev 3