STGB20N45LZAG, STGD20N45LZAG Datasheet Automotive-grade 450 V internally clamped IGBT E 300 mJ SCIS Features TAB AEC-Q101 qualified TAB SCIS energy of 300 mJ T = 25 C J 3 2 2 1 Parts are 100% tested in SCIS 3 1 ESD gate-emitter protection 2 D PAK DPAK Gate-collector high voltage clamping Logic level gate drive C (2 or TAB) Very low saturation voltage High pulsed current capability Gate and gate-emitter resistor R G G (1) Applications R GE Automotive ignition coil driver circuit E (3) IGBTG1C2TABE3ESD Description This application-specific IGBT utilizes the most advanced PowerMESH technology optimized for coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required. Product status STGB20N45LZAG STGD20N45LZAG Product summary Order code STGB20N45LZAG Marking GB20N45LZ 2 Package D PAK Packing Tape and reel Order code STGD20N45LZAG Marking GD20N45LZ Package DPAK Packing Tape and reel DS11362 - Rev 6 - February 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGB20N45LZAG, STGD20N45LZAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) V V CES GE CES(clamped) V Emitter-collector voltage (V = 0 V) 20 V ECS GE Continuous collector current at T = 25 C, V = 4 V 25 A C GE I C Continuous collector current at T = 100 C, V = 4 V 25 A C GE (1) I Pulsed collector current 50 A CP V V Gate-emitter voltage V GE GE(clamped) P Total dissipation at T = 25 C 150 W TOT C (2) E Self-clamping inductive switching energy 300 mJ SCIS 25 (3) E Self-clamping inductive switching energy T = 150 C 170 mJ SCIS 150 J Human body model, R = 1.5 k, C = 100 pF 4 kV ESD Charged device model 2 kV T Storage temperature range C STG -55 to 175 T Operating junction temperature range J 1. Pulse width limited by maximum junction temperature. 2. Starting T = 25 C, L = 3 mH, R = 1 k, V = 50 V during inductor charging and V = 0 V during the time in clamp. Parts j g cc cc are 100% electrically tested in production. 3. Starting T = 150 C, L = 3 mH, R = 1 k, V = 50 V during inductor charging and V = 0 V during the time in clamp. j g cc cc Table 2. Thermal data Value Symbol Parameter Unit DPAK DPAK R Thermal resistance junction-case 1 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb DS11362 - Rev 6 page 2/20