X-On Electronics has gained recognition as a prominent supplier of DGTD65T15H2TF IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. DGTD65T15H2TF IGBT Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

DGTD65T15H2TF Diodes Incorporated

DGTD65T15H2TF electronic component of Diodes Incorporated
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See Product Specifications
Part No.DGTD65T15H2TF
Manufacturer: Diodes Incorporated
Category: IGBT Transistors
Description: IGBT Transistors IGBT 600V-X
Datasheet: DGTD65T15H2TF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.969 ea
Line Total: USD 1.97 
Availability - 1470
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
219
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 1.7881
10 : USD 1.4213
30 : USD 1.2642
100 : USD 1.068
500 : USD 0.9808
1000 : USD 0.9282

1470
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.969
10 : USD 1.342
100 : USD 1.177
250 : USD 1.0989
500 : USD 0.9856
1000 : USD 0.8954
2000 : USD 0.8877
10000 : USD 0.8822

558
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.82
5 : USD 1.652
13 : USD 1.344
35 : USD 1.26

   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Mounting Style
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DGTD65T15H2TF from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DGTD65T15H2TF and other electronic components in the IGBT Transistors category and beyond.

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DGTD65T15H2TF Green 650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench High Ruggedness for Motor Control IGBT Technology, which provides high-performance, excellent quality, V Positive Temperature Coefficient CE(sat) and high ruggedness. Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maximum Junction Temperature +175 C Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Motor Drive Case: ITO220AB (Type MC) Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: FinishMatte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 1.9 grams (Approximate) Collector Gate G C Emitter E ITO220AB (Type MC) Device Symbol Ordering Information (Note 4) Product Marking Quantity DGTD65T15H2TF DGTD65T15H2 1000 per Box in Tubes (Note 5) Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).compliant. All applicable RoHS exemptions applied. 2. See DGTD65T15H2TF Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage V 650 V CE T = +25C 30 A C DC Collector Current, Limited by T I jmax C T = +100C 15 A C 60 A Pulsed Collector Current, t Limited by T I p jmax Cpuls 30 A T = +25C C Diode Forward Current Limited by T I jmax F 15 A T = +100C C I 60 A Diode Pulsed Current, t Limited by T Fpuls p jmax Gate-Emitter Voltage V 20 V GE Short Circuit Withstand Time 5 s t SC V 360V, V = 15V, T = +150C CC GE j Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 48 T = +25C C Power Dissipation Linear Derating Factor (Note 7) P W D 24 T = +100C C Thermal Resistance, Junction to Ambient (Note 6) R 62 JA Thermal Resistance, Junction to Case for IBGT (Note 7) 3.0 C/W R JC Thermal Resistance, Junction to Case for Diode (Note 7) R 5.0 JC Operating Temperature T -40 to +175 j C Storage Temperature Range T -55 to +150 STG Note: 6. For a device mounted in a socket in still air conditions. Collector lead length 10mm. 7. For a device mounted on a Force Cooled Aluminium Heatsink 80x80x60mm. 2 of 9 June 2018 DGTD65T15H2TF Diodes Incorporated www.diodes.com Document Number DS39649 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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