X-On Electronics has gained recognition as a prominent supplier of IKQ50N120CH3XKSA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IKQ50N120CH3XKSA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IKQ50N120CH3XKSA1 Infineon

IKQ50N120CH3XKSA1 electronic component of Infineon
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Part No.IKQ50N120CH3XKSA1
Manufacturer: Infineon
Category: IGBT Transistors
Description: Transistor: IGBT; 1200V; 50A; 173W; TO247-3; Series: H3
Datasheet: IKQ50N120CH3XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.5095 ea
Line Total: USD 14.51 
Availability - 4
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Thu. 28 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 14.5095
10 : USD 14.0439

   
Manufacturer
Product Category
Power Dissipation
Series
Case
Mounting
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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We are delighted to provide the IKQ50N120CH3XKSA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IKQ50N120CH3XKSA1 and other electronic components in the IGBT Transistors category and beyond.

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IKQ50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode C Features: High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175C vj Easy paralleling capability due to positive temperature G coefficient in VCEsat E Low EMI Low Gate Charge Q G Very soft, fast recovery full current anti-parallel diode Maximum junction temperature T =175C vjmax Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models: IKQ50N120CH3 High speed switching series third generation IGBT Table of Contents Description 1 Table of Contents . 2 Maximum Ratings . 3 Thermal Resistance . 3 Electrical Characteristics 4 Electrical Characteristics Diagrams . 6 Package Drawing .13 Testing Conditions 14 Revision History 15 Disclaimer .16 Datasheet 2 V 2.4 2019-04-15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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