STGD3NB60SD N-CHANNEL 3A - 600V - DPAK PowerMESH IGBT TYPE V V I CES CE(sat) C STGD3NB60SD 600 V < 1.5 V3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 VERY LOW ON-VOLTAGE DROP (V ) cesat 1 HIGH CURRENT CAPABILITY INTEGRATED WHEELING DIODE DPAK OFF LOSSES INCLUDE TAIL CURRENT DESCRIPTION Using the latest high voltage technology based on INTERNAL SCHEMATIC DIAGRAM a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH IGBTs, with outstanding performances. The suffix S identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS MOTOR CONTROL GAS DISCHARGE LAMP STATIC RELAYS ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGD3NB60SDT4 GD3NB60SD DPAK TAPE & REEL May 2004 1/9STGD3NB60SD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V =0) 600 V CES GS V Gate-Emitter Voltage 20 V GE I Collector Current (continuous) at T =25C 6A C C I Collector Current (continuous) at T = 100C 3A C C I ( ) Collector Current (pulsed) 25 A CM P Total Dissipation at T =25C 48 W TOT C Derating Factor 0.32 W/C T Storage Temperature 65 to 175 C stg T Max. Operating Junction Temperature 175 C j ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 3.125 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Collectro-Emitter Breakdown I = 250 A, V = 0 600 V BR(CES) C GE Voltage I Collector cut-off V =Max Rating,T =25 C 10 A CES CE C (V =0) GE V =Max Rating,T = 125 C 100 A CE C I Gate-Emitter Leakage V =20V,V =0 100 nA GES GE CE Current (V =0) CE ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V =V ,I = 250A 2.5 4.5 V GE(th) CE GE C V Collector-Emitter Saturation V =15V, I =1.5A V CE(sat) GE C 1 Voltage 1.5 V V =15V, I =3 A 1.2 GE C V V =15V,I =7 A, T =125 C 1.1 GE C J DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g Forward Transconductance V =10V I =3 A 1.7 2.5 S fs CE , C C Input Capacitance V = 25V,f= 1MHz,V =0 255 pF ies CE GE C Output Capacitance 30 pF oes C Reverse Transfer 5.6 pF res Capacitance Q Total Gate Charge V =480V, I =3A, 18 nC 23 G CE C Q Gate-Emitter Charge V =15V 5.4 nC GE GE Gate-Collector Charge 5.5 nC Q GC I Latching Current V = 380 V , Tj = 25C 15 A CL clamp R =1K G 2/9