X-On Electronics has gained recognition as a prominent supplier of STGF20M65DF2 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGF20M65DF2 IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGF20M65DF2 STMicroelectronics

STGF20M65DF2 electronic component of STMicroelectronics
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Part No.STGF20M65DF2
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
Datasheet: STGF20M65DF2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.6702 ea
Line Total: USD 2670.2 
Availability - 970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 2.6702
2000 : USD 2.6443
2500 : USD 2.6185
3000 : USD 2.5927
5000 : USD 2.5667
10000 : USD 2.541

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Numofpackaging
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the STGF20M65DF2 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGF20M65DF2 and other electronic components in the IGBT Transistors category and beyond.

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STGF20M65DF2 Datasheet Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT Features High short-circuit withstand time V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameter distribution Safer paralleling 3 2 Low thermal resistance 1 Soft and very fast recovery antiparallel diode TO-220FP C (2) Applications Motor control UPS PFC G (1) General-purpose inverters Description Sc12850 no tab E (3) This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGF20M65DF2 Product summary Order code STGF20M65DF2 Marking G20M65DF2 Package TO-220FP Packing Tube DS11363 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGF20M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE (1) I Continuous collector current at T = 25 C 40 A C C (1) I Continuous collector current at T = 100 C 20 A C C (2) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE (1) I Continuous forward current at T = 25 C 40 A C F (1) I Continuous forward current at T = 100 C 20 A F C (2) I Pulsed forward current 80 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C P Total dissipation at T = 25 C 32.6 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 4.6 C/W thJC R Thermal resistance junction-case diode 6.25 C/W thJC R Thermal resistance junction-ambient 62.5 C/W thJA DS11363 - Rev 4 page 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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