STGF30H60DF STMicroelectronics

STGP30H60DF Datasheet Trench gate field-stop 600 V, 30 A high speed IGBT Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance 3 2 1 Short circuit rated TO-220 Ultrafast soft recovery antiparallel diode Applications Inverter UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of high frequency converters. Furthermore, the positive V temperature coefficient and the tight parameter CE(sat) distribution result in safer paralleling operation. Product status link STGP30H60DF Product summary Order code STGP30H60DF Marking GP30H60DF Package TO-220 Packing Tube DS8709 - Rev 4 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.STGP30H60DF Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I A C Continuous collector current at T = 100 C 30 C (1) I Pulsed collector current 120 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 60 C I A F Continuous forward current at T = 100 C 30 C (1) I Pulsed forward current 120 A FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 C stg T Operating junction temperature range - 55 to 175 C J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.58 R C/W thJC Thermal resistance junction-case diode 2.5 R Thermal resistance junction-ambient 62.5 C/W thJA DS8709 - Rev 4 page 2/14