X-On Electronics has gained recognition as a prominent supplier of STGF3NC120HD IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. STGF3NC120HD IGBT Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

STGF3NC120HD STMicroelectronics

Name: STGF3NC120HD
Brand: STMicroelectronics
SKU: STGF3NC120HD_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STGF3NC120HD electronic component of STMicroelectronics

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Part No.	STGF3NC120HD
Manufacturer:	STMicroelectronics
Category:	IGBT Transistors
Description:	STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
Datasheet:	STGF3NC120HD Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.632 ea
Line Total: USD 2.63

Availability - 76
Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

STGF3NC120HD More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

76

Ship by Wed. 05 Mar to Fri. 07 Mar

MOQ : 1
Multiples : 1

1 : USD 2.632
10 : USD 2.03
11 : USD 1.722
29 : USD 1.624
100 : USD 1.554

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

IGBT Transistors IGBT Transistors

RoHS - XON

Y Y

Configuration

Single Single

Collector- Emitter Voltage VCEO Max

1200 V 1200 V

Collector-Emitter Saturation Voltage

2.8 V 2.8 V

Maximum Gate Emitter Voltage

+/- 20 V +/- 20 V

Continuous Collector Current at 25 C

6 A 6 A

Gate-Emitter Leakage Current

+/- 100 nA +/- 100 nA

Package / Case

TO - 220 - 3 FP TO - 220 - 3 FP

Packaging

Tube Tube

Technology

Si Si

Mounting Style

Through Hole Through Hole

Technology

Si Si

Pd - Power Dissipation

25 W 25 W

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Series

900 - 1300V Igbts 900 - 1300V Igbts

Continuous Collector Current Ic Max

6 A 6 A

Brand

Stmicroelectronics Stmicroelectronics

Factory Pack Quantity :

1000 1000

Height

9.3 mm 9.3 mm

Length

10.4 mm 10.4 mm

Width

4.6 mm 4.6 mm

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Igbt Transistors Igbt Transistors

Subcategory

Igbts Igbts

Taric

8541210000 8541210000

Category

Igbt Transistors Igbt Transistors

Brand Category

Stmicroelectronics Stmicroelectronics

Notes:- Show Stocked Products With Similar Attributes.

STGF3NC120HD Alternative Parts

We are delighted to provide the STGF3NC120HD from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STGF3NC120HD and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

The STGF3NC120HD is a high-voltage, high-current, N-Channel insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. It is rated to handle up to 1200 Volts and 3 Amps with a low on-state voltage drop and excellent efficiency. Its robust metal-oxide-semiconductor (MOS) structure and advanced process technology deliver excellent durability and reliability. Its built-in protection features offer fast and accurate fault diagnosis capabilities and protection against short circuits and thermal exhaustion. Its advanced gate drive, integrated high-speed anti-parallel diode, and floating gate collector results in fast turn-on and turn-off times. This IGBT is ideal for use in applications that require high power with low thermal losses.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
76 Ship by Wed. 05 Mar to Fri. 07 Mar MOQ : 1 Multiples : 1	1 : USD 2.632 10 : USD 2.03 11 : USD 1.722 29 : USD 1.624 100 : USD 1.554

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