Product Information

STGF3NC120HD

STGF3NC120HD electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors N-Ch 1200 Volt 3 Amp
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.0583 ea
Line Total: USD 1058.3

67 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 70
Pack Size: 70

 More Buying Options & Price Grid(s)

Availability Price Quantity
67 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 70

Stock Image

STGF3NC120HD
STMicroelectronics

1000 : USD 1.0583

38 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STGF3NC120HD
STMicroelectronics

1 : USD 2.379
3 : USD 2.132
10 : USD 1.69
27 : USD 1.599
250 : USD 1.586

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

The STGF3NC120HD is a high-voltage, high-current, N-Channel insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. It is rated to handle up to 1200 Volts and 3 Amps with a low on-state voltage drop and excellent efficiency. Its robust metal-oxide-semiconductor (MOS) structure and advanced process technology deliver excellent durability and reliability. Its built-in protection features offer fast and accurate fault diagnosis capabilities and protection against short circuits and thermal exhaustion. Its advanced gate drive, integrated high-speed anti-parallel diode, and floating gate collector results in fast turn-on and turn-off times. This IGBT is ideal for use in applications that require high power with low thermal losses.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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